On-chip integrated process-programmable sub-10 nm thick molecular devices switching between photomultiplication and memristive behaviour

Tianming Li, Martin Hantusch, Jiang Qu, Vineeth Kumar Bandari, Martin Knupfer, Feng Zhu () and Oliver G. Schmidt ()
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Tianming Li: Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology
Martin Hantusch: Institute for Solid State Research, Leibniz IFW Dresden
Jiang Qu: Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology
Vineeth Kumar Bandari: Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology
Martin Knupfer: Institute for Solid State Research, Leibniz IFW Dresden
Feng Zhu: Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology
Oliver G. Schmidt: Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology

Nature Communications, 2022, vol. 13, issue 1, 1-10

Abstract: Abstract Molecular devices constructed by sub-10 nm thick molecular layers are promising candidates for a new generation of integratable nanoelectronic applications. Here, we report integrated molecular devices based on ultrathin copper phthalocyanine/fullerene hybrid layers with microtubular soft-contacts, which exhibit process-programmable functionality switching between photomultiplication and memristive behaviour. The local electric field at the interface between the polymer bottom electrode and the enclosed molecular channels modulates the ionic-electronic charge interaction and hence determines the transition of the device function. When ions are not driven into the molecular channels at a low interface electric field, photogenerated holes are trapped as electronic space charges, resulting in photomultiplication with a high external quantum efficiency. Once mobile ions are polarized and accumulated as ionic space charges in the molecular channels at a high interface electric field, the molecular devices show ferroelectric-like memristive switching with remarkable resistive ON/OFF and rectification ratios.

Date: 2022
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DOI: 10.1038/s41467-022-30498-y

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