Highly efficient nonlinear optical emission from a subwavelength crystalline silicon cuboid mediated by supercavity mode

Mingcheng Panmai, Jin Xiang, Shulei Li, Xiaobing He, Yuhao Ren, Miaoxuan Zeng, Juncong She, Juntao Li () and Sheng Lan ()
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Mingcheng Panmai: South China Normal University
Jin Xiang: South China Normal University
Shulei Li: South China Normal University
Xiaobing He: South China Normal University
Yuhao Ren: Sun Yat-sen University
Miaoxuan Zeng: Sun Yat-sen University
Juncong She: Sun Yat-sen University
Juntao Li: Sun Yat-sen University
Sheng Lan: South China Normal University

Nature Communications, 2022, vol. 13, issue 1, 1-9

Abstract: Abstract The low quantum efficiency of silicon (Si) has been a long-standing challenge for scientists. Although improvement of quantum efficiency has been achieved in porous Si or Si quantum dots, highly efficient Si-based light sources prepared by using the current fabrication technooloy of Si chips are still being pursued. Here, we proposed a strategy, which exploits the intrinsic excitation of carriers at high temperatures, to modify the carrier dynamics in Si nanoparticles. We designed a Si/SiO2 cuboid supporting a quasi-bound state in the continuum (quasi-BIC) and demonstrated the injection of dense electron-hole plasma via two-photon-induced absorption by resonantly exciting the quasi-BIC with femtosecond laser pulses. We observed a significant improvement in quantum efficiency by six orders of magnitude to ~13%, which is manifested in the ultra-bright hot electron luminescence emitted from the Si/SiO2 cuboid. We revealed that femtosecond laser light with transverse electric polarization (i.e., the electric field perpendicular to the length of a Si/SiO2 cuboid) is more efficient for generating hot electron luminescence in Si/SiO2 cuboids as compared with that of transverse magnetic polarization (i.e., the magnetic field perpendicular to the length of a Si/SiO2 cuboid). Our findings pave the way for realizing on-chip nanoscale Si light sources for photonic integrated circuits and open a new avenue for manipulating the luminescence properties of semiconductors with indirect bandgaps.

Date: 2022
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DOI: 10.1038/s41467-022-30503-4

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