Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge

Liyan Dai, Jinyan Zhao, Jingrui Li (), Bohan Chen, Shijie Zhai, Zhongying Xue, Zengfeng Di, Boyuan Feng, Yanxiao Sun, Yunyun Luo, Ming Ma, Jie Zhang, Sunan Ding, Libo Zhao, Zhuangde Jiang, Wenbo Luo, Yi Quan, Jutta Schwarzkopf, Thomas Schroeder, Zuo-Guang Ye, Ya-Hong Xie, Wei Ren () and Gang Niu ()
Additional contact information
Liyan Dai: Xi’an Jiaotong University
Jinyan Zhao: Xi’an Jiaotong University
Jingrui Li: Xi’an Jiaotong University
Bohan Chen: Xi’an Jiaotong University
Shijie Zhai: Xi’an Jiaotong University
Zhongying Xue: Chinese Academy of Science
Zengfeng Di: Chinese Academy of Science
Boyuan Feng: Chinese Academy of Sciences
Yanxiao Sun: Xi’an Jiaotong University
Yunyun Luo: Xi’an Jiaotong University
Ming Ma: Xi’an Jiaotong University
Jie Zhang: Xi’an Jiaotong University
Sunan Ding: Chinese Academy of Sciences
Libo Zhao: Xi’an Jiaotong University
Zhuangde Jiang: Xi’an Jiaotong University
Wenbo Luo: University of Electronic Science and Technology of China
Yi Quan: Xi’an Jiaotong University
Jutta Schwarzkopf: Leibniz-Institut für Kristallzüchtung
Thomas Schroeder: Leibniz-Institut für Kristallzüchtung
Zuo-Guang Ye: Simon Fraser University
Ya-Hong Xie: University of California
Wei Ren: Xi’an Jiaotong University
Gang Niu: Xi’an Jiaotong University

Nature Communications, 2022, vol. 13, issue 1, 1-10

Abstract: Abstract The integration of complex oxides with a wide spectrum of functionalities on Si, Ge and flexible substrates is highly demanded for functional devices in information technology. We demonstrate the remote epitaxy of BaTiO3 (BTO) on Ge using a graphene intermediate layer, which forms a prototype of highly heterogeneous epitaxial systems. The Ge surface orientation dictates the outcome of remote epitaxy. Single crystalline epitaxial BTO3-δ films were grown on graphene/Ge (011), whereas graphene/Ge (001) led to textured films. The graphene plays an important role in surface passivation. The remote epitaxial deposition of BTO3-δ follows the Volmer-Weber growth mode, with the strain being partially relaxed at the very beginning of the growth. Such BTO3-δ films can be easily exfoliated and transferred to arbitrary substrates like Si and flexible polyimide. The transferred BTO3-δ films possess enhanced flexoelectric properties with a gauge factor of as high as 1127. These results not only expand the understanding of heteroepitaxy, but also open a pathway for the applications of devices based on complex oxides.

Date: 2022
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DOI: 10.1038/s41467-022-30724-7

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