ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics

Yongxi Ou, Wilson Yanez, Run Xiao, Max Stanley, Supriya Ghosh, Boyang Zheng, Wei Jiang, Yu-Sheng Huang, Timothy Pillsbury, Anthony Richardella, Chaoxing Liu, Tony Low, Vincent H. Crespi, K. Andre Mkhoyan and Nitin Samarth ()
Additional contact information
Yongxi Ou: The Pennsylvania State University
Wilson Yanez: The Pennsylvania State University
Run Xiao: The Pennsylvania State University
Max Stanley: The Pennsylvania State University
Supriya Ghosh: University of Minnesota
Boyang Zheng: The Pennsylvania State University
Wei Jiang: University of Minnesota
Yu-Sheng Huang: The Pennsylvania State University
Timothy Pillsbury: The Pennsylvania State University
Anthony Richardella: The Pennsylvania State University
Chaoxing Liu: The Pennsylvania State University
Tony Low: University of Minnesota
Vincent H. Crespi: The Pennsylvania State University
K. Andre Mkhoyan: University of Minnesota
Nitin Samarth: The Pennsylvania State University

Nature Communications, 2022, vol. 13, issue 1, 1-9

Abstract: Abstract The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fundamental properties and fashioning proof-of-concept devices. Here, we use molecular beam epitaxy to synthesize a vdW heterostructure that interfaces two material systems of contemporary interest: a 2D ferromagnet (1T-CrTe2) and a topological semimetal (ZrTe2). We find that one unit-cell (u.c.) thick 1T-CrTe2 grown epitaxially on ZrTe2 is a 2D ferromagnet with a clear anomalous Hall effect. In thicker samples (12 u.c. thick CrTe2), the anomalous Hall effect has characteristics that may arise from real-space Berry curvature. Finally, in ultrathin CrTe2 (3 u.c. thickness), we demonstrate current-driven magnetization switching in a full vdW topological semimetal/2D ferromagnet heterostructure device.

Date: 2022
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DOI: 10.1038/s41467-022-30738-1

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