Epitaxial growth of inch-scale single-crystal transition metal dichalcogenides through the patching of unidirectionally orientated ribbons

Pengfei Yang, Dashuai Wang, Xiaoxu Zhao, Wenzhi Quan, Qi Jiang, Xuan Li, Bin Tang, Jingyi Hu, Lijie Zhu, Shuangyuan Pan, Yuping Shi, Yahuan Huan, Fangfang Cui, Shan Qiao, Qing Chen, Zheng Liu, Xiaolong Zou () and Yanfeng Zhang ()
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Pengfei Yang: Peking University
Dashuai Wang: Tsinghua University
Xiaoxu Zhao: Peking University
Wenzhi Quan: Peking University
Qi Jiang: Chinese Academy of Sciences
Xuan Li: Peking University
Bin Tang: Peking University
Jingyi Hu: Peking University
Lijie Zhu: Peking University
Shuangyuan Pan: Peking University
Yuping Shi: Peking University
Yahuan Huan: Peking University
Fangfang Cui: Peking University
Shan Qiao: Chinese Academy of Sciences
Qing Chen: Peking University
Zheng Liu: Nanyang Technological University
Xiaolong Zou: Tsinghua University
Yanfeng Zhang: Peking University

Nature Communications, 2022, vol. 13, issue 1, 1-9

Abstract: Abstract Two-dimensional (2D) semiconductors, especially transition metal dichalcogenides (TMDs), have been envisioned as promising candidates in extending Moore’s law. To achieve this, the controllable growth of wafer-scale TMDs single crystals or periodic single-crystal patterns are fundamental issues. Herein, we present a universal route for synthesizing arrays of unidirectionally orientated monolayer TMDs ribbons (e.g., MoS2, WS2, MoSe2, WSe2, MoSxSe2-x), by using the step edges of high-miller-index Au facets as templates. Density functional theory calculations regarding the growth kinetics of specific edges have been performed to reveal the morphological transition from triangular domains to patterned ribbons. More intriguingly, we find that, the uniformly aligned TMDs ribbons can merge into single-crystal films through a one-dimensional edge epitaxial growth mode. This work hereby puts forward an alternative pathway for the direct synthesis of inch-scale uniform monolayer TMDs single-crystals or patterned ribbons, which should promote their applications as channel materials in high-performance electronics or other fields.

Date: 2022
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DOI: 10.1038/s41467-022-30900-9

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