Catalyst-free synthesis of sub-5 nm silicon nanowire arrays with massive lattice contraction and wide bandgap

Sen Gao, Sanghyun Hong, Soohyung Park, Hyun Young Jung, Wentao Liang, Yonghee Lee, Chi Won Ahn, Ji Young Byun, Juyeon Seo, Myung Gwan Hahm, Hyehee Kim, Kiwoong Kim, Yeonjin Yi, Hailong Wang, Moneesh Upmanyu, Sung-Goo Lee, Yoshikazu Homma, Humberto Terrones and Yung Joon Jung ()
Additional contact information
Sen Gao: Northeastern University
Sanghyun Hong: Northeastern University
Soohyung Park: Korea Institute of Science and Technology
Hyun Young Jung: Gyeongsang National University
Wentao Liang: Northeastern University
Yonghee Lee: Korea Advanced Institute of Science and Technology
Chi Won Ahn: Korea Advanced Institute of Science and Technology
Ji Young Byun: Korea Institute of Science and Technology
Juyeon Seo: Northeastern University
Myung Gwan Hahm: Inha University
Hyehee Kim: Northeastern University
Kiwoong Kim: Yonsei University
Yeonjin Yi: Yonsei University
Hailong Wang: University of Science and Technology of China
Moneesh Upmanyu: Northeastern University
Sung-Goo Lee: Korea Research Institute of Chemical Technology
Yoshikazu Homma: Tokyo University of Science
Humberto Terrones: Applied Physics and Astronomy, Rensselaer Polytechnic Institute
Yung Joon Jung: Northeastern University

Nature Communications, 2022, vol. 13, issue 1, 1-9

Abstract: Abstract The need for miniaturized and high-performance devices has attracted enormous attention to the development of quantum silicon nanowires. However, the preparation of abundant quantities of silicon nanowires with the effective quantum-confined dimension remains challenging. Here, we prepare highly dense and vertically aligned sub-5 nm silicon nanowires with length/diameter aspect ratios greater than 10,000 by developing a catalyst-free chemical vapor etching process. We observe an unusual lattice reduction of up to 20% within ultra-narrow silicon nanowires and good oxidation stability in air compared to conventional silicon. Moreover, the material exhibits a direct optical bandgap of 4.16 eV and quasi-particle bandgap of 4.75 eV with the large exciton binding energy of 0.59 eV, indicating the significant phonon and electronic confinement. The results may provide an opportunity to investigate the chemistry and physics of highly confined silicon quantum nanostructures and may explore their potential uses in nanoelectronics, optoelectronics, and energy systems.

Date: 2022
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DOI: 10.1038/s41467-022-31174-x

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