Light sources with bias tunable spectrum based on van der Waals interface transistors

Hugo Henck, Diego Mauro, Daniil Domaretskiy, Marc Philippi, Shahriar Memaran, Wenkai Zheng, Zhengguang Lu, Dmitry Shcherbakov, Chun Ning Lau, Dmitry Smirnov, Luis Balicas, Kenji Watanabe, Takashi Taniguchi, Vladimir I. Fal’ko, Ignacio Gutiérrez-Lezama, Nicolas Ubrig () and Alberto F. Morpurgo ()
Additional contact information
Hugo Henck: University of Geneva
Diego Mauro: University of Geneva
Daniil Domaretskiy: University of Geneva
Marc Philippi: University of Geneva
Shahriar Memaran: National High Magnetic Field Laboratory
Wenkai Zheng: National High Magnetic Field Laboratory
Zhengguang Lu: National High Magnetic Field Laboratory
Dmitry Shcherbakov: The Ohio State University
Chun Ning Lau: The Ohio State University
Dmitry Smirnov: National High Magnetic Field Laboratory
Luis Balicas: National High Magnetic Field Laboratory
Kenji Watanabe: Research Center for Functional Materials, National Institute for Materials Science
Takashi Taniguchi: International Center for Materials Nanoarchitectonics, National Institute for Materials Science
Vladimir I. Fal’ko: National Graphene Institute, University of Manchester
Ignacio Gutiérrez-Lezama: University of Geneva
Nicolas Ubrig: University of Geneva
Alberto F. Morpurgo: University of Geneva

Nature Communications, 2022, vol. 13, issue 1, 1-8

Abstract: Abstract Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broad electrical tuning of the spectrum of electroluminescent devices remains challenging. Here, we propose light-emitting field-effect transistors based on van der Waals interfaces of atomically thin semiconductors as a promising class of devices to achieve this goal. We demonstrate that large spectral changes in room-temperature electroluminescence can be controlled both at the device assembly stage –by suitably selecting the material forming the interfaces– and on-chip, by changing the bias to modify the device operation point. Even though the precise relation between device bias and kinetics of the radiative transitions remains to be understood, our experiments show that the physical mechanism responsible for light emission is robust, making these devices compatible with simple large areas device production methods.

Date: 2022
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DOI: 10.1038/s41467-022-31605-9

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