Ultra-wide bandgap semiconductor Ga2O3 power diodes

Jincheng Zhang, Pengfei Dong, Kui Dang, Yanni Zhang, Qinglong Yan, Hu Xiang, Jie Su, Zhihong Liu, Mengwei Si, Jiacheng Gao, Moufu Kong, Hong Zhou () and Yue Hao
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Jincheng Zhang: Xidian University
Pengfei Dong: Xidian University
Kui Dang: Xidian University
Yanni Zhang: Xidian University
Qinglong Yan: Xidian University
Hu Xiang: Xidian University
Jie Su: Xidian University
Zhihong Liu: Xidian University
Mengwei Si: Shanghai Jiao Tong University
Jiacheng Gao: University of Electronic Science and Technology of China
Moufu Kong: University of Electronic Science and Technology of China
Hong Zhou: Xidian University
Yue Hao: Xidian University

Nature Communications, 2022, vol. 13, issue 1, 1-8

Abstract: Abstract Ultra-wide bandgap semiconductor Ga2O3 based electronic devices are expected to perform beyond wide bandgap counterparts GaN and SiC. However, the reported power figure-of-merit hardly can exceed, which is far below the projected Ga2O3 material limit. Major obstacles are high breakdown voltage requires low doping material and PN junction termination, contradicting with low specific on-resistance and simultaneous achieving of n- and p-type doping, respectively. In this work, we demonstrate that Ga2O3 heterojunction PN diodes can overcome above challenges. By implementing the holes injection in the Ga2O3, bipolar transport can induce conductivity modulation and low resistance in a low doping Ga2O3 material. Therefore, breakdown voltage of 8.32 kV, specific on-resistance of 5.24 mΩ⋅cm2, power figure-of-merit of 13.2 GW/cm2, and turn-on voltage of 1.8 V are achieved. The power figure-of-merit value surpasses the 1-D unipolar limit of GaN and SiC. Those Ga2O3 power diodes demonstrate their great potential for next-generation power electronics applications.

Date: 2022
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DOI: 10.1038/s41467-022-31664-y

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