Nonvolatile ferroelectric domain wall memory integrated on silicon

Haoying Sun, Jierong Wang, Yushu Wang, Changqing Guo, Jiahui Gu, Wei Mao, Jiangfeng Yang, Yuwei Liu, Tingting Zhang, Tianyi Gao, Hanyu Fu, Tingjun Zhang, Yufeng Hao, Zhengbin Gu, Peng Wang, Houbing Huang and Yuefeng Nie ()
Additional contact information
Haoying Sun: Nanjing University
Jierong Wang: Nanjing University
Yushu Wang: Nanjing University
Changqing Guo: University of Warwick
Jiahui Gu: Nanjing University
Wei Mao: Nanjing University
Jiangfeng Yang: Nanjing University
Yuwei Liu: Nanjing University
Tingting Zhang: Nanjing University
Tianyi Gao: Nanjing University
Hanyu Fu: Nanjing University
Tingjun Zhang: Nanjing University
Yufeng Hao: Nanjing University
Zhengbin Gu: Nanjing University
Peng Wang: University of Warwick
Houbing Huang: Beijing Institute of Technology
Yuefeng Nie: Nanjing University

Nature Communications, 2022, vol. 13, issue 1, 1-9

Abstract: Abstract Ferroelectric domain wall memories have been proposed as a promising candidate for nonvolatile memories, given their intriguing advantages including low energy consumption and high-density integration. Perovskite oxides possess superior ferroelectric prosperities but perovskite-based domain wall memory integrated on silicon has rarely been reported due to the technical challenges in the sample preparation. Here, we demonstrate a domain wall memory prototype utilizing freestanding BaTiO3 membranes transferred onto silicon. While as-grown BaTiO3 films on (001) SrTiO3 substrate are purely c-axis polarized, we find they exhibit distinct in-plane multidomain structures after released from the substrate and integrated onto silicon due to the collective effects from depolarizing field and strain relaxation. Based on the strong in-plane ferroelectricity, conductive domain walls with reading currents up to nanoampere are observed and can be both created and erased artificially, highlighting the great potential of the integration of perovskite oxides with silicon for ferroelectric domain wall memories.

Date: 2022
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DOI: 10.1038/s41467-022-31763-w

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