Dirac-source diode with sub-unity ideality factor

Gyuho Myeong, Wongil Shin, Kyunghwan Sung, Seungho Kim, Hongsik Lim, Boram Kim, Taehyeok Jin, Jihoon Park, Taehun Lee, Michael S. Fuhrer, Kenji Watanabe, Takashi Taniguchi, Fei Liu () and Sungjae Cho ()
Additional contact information
Gyuho Myeong: Korea Advanced Institute of Science and Technology (KAIST)
Wongil Shin: Korea Advanced Institute of Science and Technology (KAIST)
Kyunghwan Sung: Korea Advanced Institute of Science and Technology (KAIST)
Seungho Kim: Korea Advanced Institute of Science and Technology (KAIST)
Hongsik Lim: Korea Advanced Institute of Science and Technology (KAIST)
Boram Kim: Korea Advanced Institute of Science and Technology (KAIST)
Taehyeok Jin: Korea Advanced Institute of Science and Technology (KAIST)
Jihoon Park: Korea Advanced Institute of Science and Technology (KAIST)
Taehun Lee: Korea Advanced Institute of Science and Technology (KAIST)
Michael S. Fuhrer: Monash University
Kenji Watanabe: National Institute for Materials Science, Namiki
Takashi Taniguchi: National Institute for Materials Science, Namiki
Fei Liu: Peking University
Sungjae Cho: Korea Advanced Institute of Science and Technology (KAIST)

Nature Communications, 2022, vol. 13, issue 1, 1-6

Abstract: Abstract An increase in power consumption necessitates a low-power circuit technology to extend Moore’s law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source field-effect transistors (DS-FETs), have been realised to break the thermionic limit of the subthreshold swing (SS). However, a low-power rectifier, able to overcome the thermionic limit of an ideality factor (η) of 1 at room temperature, has not been proposed yet. In this study, we have realised a DS diode based on graphene/MoS2/graphite van der Waals heterostructures, which exhibits a steep-slope characteristic curve, by exploiting the linear density of states (DOSs) of graphene. For the developed DS diode, we obtained η

Date: 2022
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DOI: 10.1038/s41467-022-31849-5

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