Low-defect-density WS2 by hydroxide vapor phase deposition

Yi Wan, En Li, Zhihao Yu, Jing-Kai Huang, Ming-Yang Li, Ang-Sheng Chou, Yi-Te Lee, Chien-Ju Lee, Hung-Chang Hsu, Qin Zhan, Areej Aljarb, Jui-Han Fu, Shao-Pin Chiu, Xinran Wang, Juhn-Jong Lin, Ya-Ping Chiu, Wen-Hao Chang, Han Wang, Yumeng Shi, Nian Lin, Yingchun Cheng (), Vincent Tung () and Lain-Jong Li ()
Additional contact information
Yi Wan: King Abdullah University of Science and Technology (KAUST)
En Li: The Hong Kong University of Science and Technology
Zhihao Yu: Taiwan Semiconductor Manufacturing Company (TSMC)
Jing-Kai Huang: University of New South Wales
Ming-Yang Li: Taiwan Semiconductor Manufacturing Company (TSMC)
Ang-Sheng Chou: Taiwan Semiconductor Manufacturing Company (TSMC)
Yi-Te Lee: National Yang Ming Chiao Tung University
Chien-Ju Lee: National Yang Ming Chiao Tung University
Hung-Chang Hsu: National Taiwan University
Qin Zhan: Nanjing Tech University
Areej Aljarb: King Abdulaziz University (KAAU)
Jui-Han Fu: King Abdullah University of Science and Technology (KAUST)
Shao-Pin Chiu: National Yang Ming Chiao Tung University
Xinran Wang: Nanjing University
Juhn-Jong Lin: National Yang Ming Chiao Tung University
Ya-Ping Chiu: National Taiwan University
Wen-Hao Chang: National Yang Ming Chiao Tung University
Han Wang: Taiwan Semiconductor Manufacturing Company (TSMC)
Yumeng Shi: Shenzhen University
Nian Lin: The Hong Kong University of Science and Technology
Yingchun Cheng: Nanjing Tech University
Vincent Tung: King Abdullah University of Science and Technology (KAUST)
Lain-Jong Li: The University of Hong Kong

Nature Communications, 2022, vol. 13, issue 1, 1-8

Abstract: Abstract Two-dimensional (2D) semiconducting monolayers such as transition metal dichalcogenides (TMDs) are promising channel materials to extend Moore’s Law in advanced electronics. Synthetic TMD layers from chemical vapor deposition (CVD) are scalable for fabrication but notorious for their high defect densities. Therefore, innovative endeavors on growth reaction to enhance their quality are urgently needed. Here, we report that the hydroxide W species, an extremely pure vapor phase metal precursor form, is very efficient for sulfurization, leading to about one order of magnitude lower defect density compared to those from conventional CVD methods. The field-effect transistor (FET) devices based on the proposed growth reach a peak electron mobility ~200 cm2/Vs (~800 cm2/Vs) at room temperature (15 K), comparable to those from exfoliated flakes. The FET device with a channel length of 100 nm displays a high on-state current of ~400 µA/µm, encouraging the industrialization of 2D materials.

Date: 2022
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DOI: 10.1038/s41467-022-31886-0

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