Supercurrent diode effect and magnetochiral anisotropy in few-layer NbSe2

Lorenz Bauriedl, Christian Bäuml, Lorenz Fuchs, Christian Baumgartner, Nicolas Paulik, Jonas M. Bauer, Kai-Qiang Lin, John M. Lupton, Takashi Taniguchi, Kenji Watanabe, Christoph Strunk and Nicola Paradiso ()
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Lorenz Bauriedl: University of Regensburg
Christian Bäuml: University of Regensburg
Lorenz Fuchs: University of Regensburg
Christian Baumgartner: University of Regensburg
Nicolas Paulik: University of Regensburg
Jonas M. Bauer: University of Regensburg
Kai-Qiang Lin: University of Regensburg
John M. Lupton: University of Regensburg
Takashi Taniguchi: National Institute for Materials Science
Kenji Watanabe: National Institute for Materials Science
Christoph Strunk: University of Regensburg
Nicola Paradiso: University of Regensburg

Nature Communications, 2022, vol. 13, issue 1, 1-7

Abstract: Abstract Nonreciprocal transport refers to charge transfer processes that are sensitive to the bias polarity. Until recently, nonreciprocal transport was studied only in dissipative systems, where the nonreciprocal quantity is the resistance. Recent experiments have, however, demonstrated nonreciprocal supercurrent leading to the observation of a supercurrent diode effect in Rashba superconductors. Here we report on a supercurrent diode effect in NbSe2 constrictions obtained by patterning NbSe2 flakes with both even and odd layer number. The observed rectification is a consequence of the valley-Zeeman spin-orbit interaction. We demonstrate a rectification efficiency as large as 60%, considerably larger than the efficiency of devices based on Rashba superconductors. In agreement with recent theory for superconducting transition metal dichalcogenides, we show that the effect is driven by the out-of-plane component of the magnetic field. Remarkably, we find that the effect becomes field-asymmetric in the presence of an additional in-plane field component transverse to the current direction. Supercurrent diodes offer a further degree of freedom in designing superconducting quantum electronics with the high degree of integrability offered by van der Waals materials.

Date: 2022
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DOI: 10.1038/s41467-022-31954-5

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