A Transparent Electrode Based on Solution-Processed ZnO for Organic Optoelectronic Devices

Zhi Chen, Jie Wang, Hongbo Wu, Jianming Yang, Yikai Wang, Jing Zhang, Qinye Bao, Ming Wang, Zaifei Ma (), Wolfgang Tress () and Zheng Tang ()
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Zhi Chen: Donghua University
Jie Wang: Donghua University
Hongbo Wu: Donghua University
Jianming Yang: East China Normal University
Yikai Wang: Changzhou University
Jing Zhang: Changzhou University
Qinye Bao: East China Normal University
Ming Wang: Donghua University
Zaifei Ma: Donghua University
Wolfgang Tress: Zurich University of Applied Sciences
Zheng Tang: Donghua University

Nature Communications, 2022, vol. 13, issue 1, 1-12

Abstract: Abstract Achieving high-efficiency indium tin oxide (ITO)-free organic optoelectronic devices requires the development of high-conductivity and high-transparency materials for being used as the front electrode. Herein, sol-gel-grown zinc oxide (ZnO) films with high conductivity (460 S cm−1) and low optical absorption losses in both visible and near-infrared (NIR) spectral regions are realized utilizing the persistent photoinduced doping effect. The origin of the increased conductivity after photo-doping is ascribed to selective trapping of photogenerated holes by oxygen vacancies at the surface of the ZnO film. Then, the conductivity of the sol-gel-grown ZnO is further increased by stacking the ZnO using a newly developed sequential deposition strategy. Finally, the stacked ZnO is used as the cathode to construct ITO-free organic solar cells, photodetectors, and light emitting diodes: The devices based on ZnO outperform those based on ITO, owing to the reduced surface recombination losses at the cathode/active layer interface, and the reduced parasitic absorption losses in the electrodes of the ZnO based devices.

Date: 2022
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DOI: 10.1038/s41467-022-32010-y

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