Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer

Yuan Li, Zhi Cheng Zhang, Jiaqiang Li, Xu-Dong Chen (), Ya Kong, Fu-Dong Wang, Guo-Xin Zhang, Tong-Bu Lu () and Jin Zhang ()
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Yuan Li: Tianjin University of Technology
Zhi Cheng Zhang: Tianjin University of Technology
Jiaqiang Li: Peking University
Xu-Dong Chen: Tianjin University of Technology
Ya Kong: Peking University
Fu-Dong Wang: Tianjin University of Technology
Guo-Xin Zhang: Tianjin University of Technology
Tong-Bu Lu: Tianjin University of Technology
Jin Zhang: Peking University

Nature Communications, 2022, vol. 13, issue 1, 1-9

Abstract: Abstract The explosion in demand for massive data processing and storage requires revolutionary memory technologies featuring ultrahigh speed, ultralong retention, ultrahigh capacity and ultralow energy consumption. Although a breakthrough in ultrafast floating-gate memory has been achieved very recently, it still suffers a high operation voltage (tens of volts) due to the Fowler–Nordheim tunnelling mechanism. It is still a great challenge to realize ultrafast nonvolatile storage with low operation voltage. Here we propose a floating-gate memory with a structure of MoS2/hBN/MoS2/graphdiyne oxide/WSe2, in which a threshold switching layer, graphdiyne oxide, instead of a dielectric blocking layer in conventional floating-gate memories, is used to connect the floating gate and control gate. The volatile threshold switching characteristic of graphdiyne oxide allows the direct charge injection from control gate to floating gate by applying a nanosecond voltage pulse (20 ns) with low magnitude (2 V), and restricts the injected charges in floating gate for a long-term retention (10 years) after the pulse. The high operation speed and low voltage endow the device with an ultralow energy consumption of 10 fJ. These results demonstrate a new strategy to develop next-generation high-speed low-energy nonvolatile memory.

Date: 2022
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DOI: 10.1038/s41467-022-32380-3

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