An image interaction approach to quantum-phase engineering of two-dimensional materials

Valerio Di Giulio, P. A. D. Gonçalves and F. Javier García de Abajo ()
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Valerio Di Giulio: ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology
P. A. D. Gonçalves: ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology
F. Javier García de Abajo: ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology

Nature Communications, 2022, vol. 13, issue 1, 1-8

Abstract: Abstract Tuning electrical, optical, and thermal material properties is central for engineering and understanding solid-state systems. In this scenario, atomically thin materials are appealing because of their sensitivity to electric and magnetic gating, as well as to interlayer hybridization. Here, we introduce a radically different approach to material engineering relying on the image interaction experienced by electrons in a two-dimensional material when placed in proximity of an electrically neutral structure. We theoretically show that electrons in a semiconductor atomic layer acquire a quantum phase resulting from the image potential induced by the presence of a neighboring periodic array of conducting ribbons, which in turn modifies the optical, electrical, and thermal properties of the monolayer, giving rise to additional interband optical absorption, plasmon hybridization, and metal-insulator transitions. Beyond its fundamental interest, material engineering based on the image interaction represents a disruptive approach to tailor the properties of atomic layers for application in nanodevices.

Date: 2022
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DOI: 10.1038/s41467-022-32508-5

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