Inelastic phonon transport across atomically sharp metal/semiconductor interfaces

Qinshu Li, Fang Liu, Song Hu, Houfu Song, Susu Yang, Hailing Jiang, Tao Wang, Yee Kan Koh, Changying Zhao, Feiyu Kang, Junqiao Wu, Xiaokun Gu (), Bo Sun () and Xinqiang Wang ()
Additional contact information
Qinshu Li: Tsinghua University
Fang Liu: Peking University
Song Hu: Shanghai Jiao Tong University
Houfu Song: Tsinghua University
Susu Yang: Peking University
Hailing Jiang: Peking University
Tao Wang: Peking University
Yee Kan Koh: National University of Singapore
Changying Zhao: Shanghai Jiao Tong University
Feiyu Kang: Tsinghua University
Junqiao Wu: University of California
Xiaokun Gu: Shanghai Jiao Tong University
Bo Sun: Tsinghua University
Xinqiang Wang: Peking University

Nature Communications, 2022, vol. 13, issue 1, 1-7

Abstract: Abstract Understanding thermal transport across metal/semiconductor interfaces is crucial for the heat dissipation of electronics. The dominant heat carriers in non-metals, phonons, are thought to transport elastically across most interfaces, except for a few extreme cases where the two materials that formed the interface are highly dissimilar with a large difference in Debye temperature. In this work, we show that even for two materials with similar Debye temperatures (Al/Si, Al/GaN), a substantial portion of phonons will transport inelastically across their interfaces at high temperatures, significantly enhancing interface thermal conductance. Moreover, we find that interface sharpness strongly affects phonon transport process. For atomically sharp interfaces, phonons are allowed to transport inelastically and interface thermal conductance linearly increases at high temperatures. With a diffuse interface, inelastic phonon transport diminishes. Our results provide new insights on phonon transport across interfaces and open up opportunities for engineering interface thermal conductance specifically for materials of relevance to microelectronics.

Date: 2022
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DOI: 10.1038/s41467-022-32600-w

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