Integrated wafer-scale ultra-flat graphene by gradient surface energy modulation

Xin Gao, Liming Zheng, Fang Luo, Jun Qian, Jingyue Wang, Mingzhi Yan, Wendong Wang, Qinci Wu, Junchuan Tang, Yisen Cao, Congwei Tan, Jilin Tang, Mengjian Zhu (), Yani Wang, Yanglizhi Li, Luzhao Sun, Guanghui Gao, Jianbo Yin, Li Lin, Zhongfan Liu, Shiqiao Qin () and Hailin Peng ()
Additional contact information
Xin Gao: Peking University
Liming Zheng: Peking University
Fang Luo: National University of Defense Technology
Jun Qian: Peking University
Jingyue Wang: Peking University
Mingzhi Yan: Beijing Graphene Institute
Wendong Wang: University of Manchester
Qinci Wu: Peking University
Junchuan Tang: Peking University
Yisen Cao: Beijing Graphene Institute
Congwei Tan: Peking University
Jilin Tang: Peking University
Mengjian Zhu: National University of Defense Technology
Yani Wang: Peking University
Yanglizhi Li: Peking University
Luzhao Sun: Beijing Graphene Institute
Guanghui Gao: Beijing Graphene Institute
Jianbo Yin: Beijing Graphene Institute
Li Lin: Beijing Graphene Institute
Zhongfan Liu: Peking University
Shiqiao Qin: National University of Defense Technology
Hailin Peng: Peking University

Nature Communications, 2022, vol. 13, issue 1, 1-9

Abstract: Abstract The integration of large-scale two-dimensional (2D) materials onto semiconductor wafers is highly desirable for advanced electronic devices, but challenges such as transfer-related crack, contamination, wrinkle and doping remain. Here, we developed a generic method by gradient surface energy modulation, leading to a reliable adhesion and release of graphene onto target wafers. The as-obtained wafer-scale graphene exhibited a damage-free, clean, and ultra-flat surface with negligible doping, resulting in uniform sheet resistance with only ~6% deviation. The as-transferred graphene on SiO2/Si exhibited high carrier mobility reaching up ~10,000 cm2 V−1 s−1, with quantum Hall effect (QHE) observed at room temperature. Fractional quantum Hall effect (FQHE) appeared at 1.7 K after encapsulation by h-BN, yielding ultra-high mobility of ~280,000 cm2 V−1 s−1. Integrated wafer-scale graphene thermal emitters exhibited significant broadband emission in near-infrared (NIR) spectrum. Overall, the proposed methodology is promising for future integration of wafer-scale 2D materials in advanced electronics and optoelectronics.

Date: 2022
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DOI: 10.1038/s41467-022-33135-w

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