Giant spin-to-charge conversion at an all-epitaxial single-crystal-oxide Rashba interface with a strongly correlated metal interlayer

Shingo Kaneta-Takada (), Miho Kitamura, Shoma Arai, Takuma Arai, Ryo Okano, Le Duc Anh, Tatsuro Endo, Koji Horiba, Hiroshi Kumigashira, Masaki Kobayashi, Munetoshi Seki, Hitoshi Tabata, Masaaki Tanaka () and Shinobu Ohya ()
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Shingo Kaneta-Takada: The University of Tokyo
Miho Kitamura: High Energy Accelerator Research Organization (KEK)
Shoma Arai: The University of Tokyo
Takuma Arai: The University of Tokyo
Ryo Okano: The University of Tokyo
Le Duc Anh: The University of Tokyo
Tatsuro Endo: The University of Tokyo
Koji Horiba: High Energy Accelerator Research Organization (KEK)
Hiroshi Kumigashira: High Energy Accelerator Research Organization (KEK)
Masaki Kobayashi: The University of Tokyo
Munetoshi Seki: The University of Tokyo
Hitoshi Tabata: The University of Tokyo
Masaaki Tanaka: The University of Tokyo
Shinobu Ohya: The University of Tokyo

Nature Communications, 2022, vol. 13, issue 1, 1-8

Abstract: Abstract The two-dimensional electron gas (2DEG) formed at interfaces between SrTiO3 (STO) and other oxide insulating layers is promising for use in efficient spin-charge conversion due to the large Rashba spin-orbit interaction (RSOI). However, these insulating layers on STO prevent the propagation of a spin current injected from an adjacent ferromagnetic layer. Moreover, the mechanism of the spin-current flow in these insulating layers is still unexplored. Here, using a strongly correlated polar-metal LaTiO3+δ (LTO) interlayer and the 2DEG formed at the LTO/STO interface in an all-epitaxial heterostructure, we demonstrate giant spin-to-charge current conversion efficiencies, up to ~190 nm, using spin-pumping ferromagnetic-resonance voltage measurements. This value is the highest among those reported for all materials, including spin Hall systems. Our results suggest that the strong on-site Coulomb repulsion in LTO and the giant RSOI of LTO/STO may be the key to efficient spin-charge conversion with suppressed spin-flip scattering. Our findings highlight the hidden inherent possibilities of oxide interfaces for spin-orbitronics applications.

Date: 2022
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DOI: 10.1038/s41467-022-33350-5

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