Chip-scale high-peak-power semiconductor/solid-state vertically integrated laser

Jianglin Yue, Kenji Tanaka, Go Hirano, Gen Yonezawa, Misaki Shimizu, Yasunobu Iwakoshi, Hiroshi Tobita, Rintaro Koda, Yasutaka Higa, Hideki Watanabe, Katsunori Yanashima and Masanao Kamata ()
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Jianglin Yue: Tokyo Laboratory 04, R&D Center, Sony Group Corporation
Kenji Tanaka: Tokyo Laboratory 04, R&D Center, Sony Group Corporation
Go Hirano: Tokyo Laboratory 04, R&D Center, Sony Group Corporation
Gen Yonezawa: Tokyo Laboratory 04, R&D Center, Sony Group Corporation
Misaki Shimizu: Tokyo Laboratory 04, R&D Center, Sony Group Corporation
Yasunobu Iwakoshi: Tokyo Laboratory 04, R&D Center, Sony Group Corporation
Hiroshi Tobita: Tokyo Laboratory 04, R&D Center, Sony Group Corporation
Rintaro Koda: Tokyo Laboratory 06, R&D Center, Sony Group Corporation
Yasutaka Higa: Tokyo Laboratory 06, R&D Center, Sony Group Corporation
Hideki Watanabe: Tokyo Laboratory 06, R&D Center, Sony Group Corporation
Katsunori Yanashima: Tokyo Laboratory 04, R&D Center, Sony Group Corporation
Masanao Kamata: Tokyo Laboratory 04, R&D Center, Sony Group Corporation

Nature Communications, 2022, vol. 13, issue 1, 1-9

Abstract: Abstract Compact lasers capable of producing kilowatt class peak power are highly desirable for applications in various fields, including laser remote sensing, laser micromachining, and biomedical photonics. In this paper, we propose a high-peak-power chip-scale semiconductor/solid-state vertically integrated laser in which two cavities are optically coupled at the solid-state laser gain medium. The first cavity is for the intra-pumping of ytterbium-doped yttrium aluminum garnet (Yb:YAG) with an electrically driven indium gallium arsenide (InGaAs) quantum well, and the second cavity consists of Yb:YAG and chromium-doped yttrium aluminum garnet (Cr:YAG) for passive Q-switching. The proposed laser produces pulses as short as 450 ps, and an estimated peak power of 57.0 kW with a laser chip dimension of 1 mm3. To the best of our knowledge, this is the first monolithic integration of semiconductor and solid-state laser gain mediums to realize a compact high-peak-power laser.

Date: 2022
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DOI: 10.1038/s41467-022-33528-x

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