Continuously tunable ferroelectric domain width down to the single-atomic limit in bismuth tellurite

Mengjiao Han, Cong Wang, Kangdi Niu, Qishuo Yang, Chuanshou Wang, Xi Zhang, Junfeng Dai, Yujia Wang, Xiuliang Ma, Junling Wang, Lixing Kang (), Wei Ji () and Junhao Lin ()
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Mengjiao Han: Southern University of Science and Technology
Cong Wang: Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China
Kangdi Niu: Southern University of Science and Technology
Qishuo Yang: Southern University of Science and Technology
Chuanshou Wang: Southern University of Science and Technology
Xi Zhang: Northwestern Polytechnical University
Junfeng Dai: Southern University of Science and Technology
Yujia Wang: Chinese Academy of Sciences
Xiuliang Ma: Songshan Lake Materials Laboratory
Junling Wang: Southern University of Science and Technology
Lixing Kang: Chinese Academy of Sciences
Wei Ji: Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China
Junhao Lin: Southern University of Science and Technology

Nature Communications, 2022, vol. 13, issue 1, 1-9

Abstract: Abstract Emerging functionalities in two-dimensional materials, such as ferromagnetism, superconductivity and ferroelectricity, open new avenues for promising nanoelectronic applications. Here, we report the discovery of intrinsic in-plane room-temperature ferroelectricity in two-dimensional Bi2TeO5 grown by chemical vapor deposition, where spontaneous polarization originates from Bi column displacements. We found an intercalated buffer layer consist of mixed Bi/Te column as 180° domain wall which enables facile polarized domain engineering, including continuously tunable domain width by pinning different concentration of buffer layers, and even ferroelectric-antiferroelectric phase transition when the polarization unit is pinned down to single atomic column. More interestingly, the intercalated Bi/Te buffer layer can interconvert to polarized Bi columns which end up with series terraced domain walls and unusual fan-shaped ferroelectric domain. The buffer layer induced size and shape tunable ferroelectric domain in two-dimensional Bi2TeO5 offer insights into the manipulation of functionalities in van der Waals materials for future nanoelectronics.

Date: 2022
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DOI: 10.1038/s41467-022-33617-x

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