A steep switching WSe2 impact ionization field-effect transistor

Haeju Choi, Jinshu Li, Taeho Kang, Chanwoo Kang, Hyeonje Son, Jongwook Jeon, Euyheon Hwang () and Sungjoo Lee ()
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Haeju Choi: Sungkyunkwan University
Jinshu Li: Sungkyunkwan University
Taeho Kang: Sungkyunkwan University
Chanwoo Kang: Sungkyunkwan University
Hyeonje Son: Sungkyunkwan University
Jongwook Jeon: Konkuk University
Euyheon Hwang: Sungkyunkwan University
Sungjoo Lee: Sungkyunkwan University

Nature Communications, 2022, vol. 13, issue 1, 1-9

Abstract: Abstract The Fermi-Dirac distribution of carriers and the drift-diffusion mode of transport represent two fundamental barriers towards the reduction of the subthreshold slope (SS) and the optimization of the energy consumption of field-effect transistors. In this study, we report the realization of steep-slope impact ionization field-effect transistors (I2FETs) based on a gate-controlled homogeneous WSe2 lateral junction. The devices showed average SS down to 2.73 mV/dec over three decades of source-drain current and an on/off ratio of ~106 at room temperature and low bias voltages (

Date: 2022
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DOI: 10.1038/s41467-022-33770-3

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