Monolithically integrated, broadband, high-efficiency silicon nitride-on-silicon waveguide photodetectors in a visible-light integrated photonics platform

Yiding Lin (), Zheng Yong, Xianshu Luo, Saeed Sharif Azadeh, Jared C. Mikkelsen, Ankita Sharma, Hong Chen, Jason C. C. Mak, Patrick Guo-Qiang Lo, Wesley D. Sacher and Joyce K. S. Poon ()
Additional contact information
Yiding Lin: Max Planck Institute of Microstructure Physics
Zheng Yong: University of Toronto
Xianshu Luo: Advanced Micro Foundry Pte Ltd
Saeed Sharif Azadeh: Max Planck Institute of Microstructure Physics
Jared C. Mikkelsen: Max Planck Institute of Microstructure Physics
Ankita Sharma: Max Planck Institute of Microstructure Physics
Hong Chen: Max Planck Institute of Microstructure Physics
Jason C. C. Mak: University of Toronto
Patrick Guo-Qiang Lo: Advanced Micro Foundry Pte Ltd
Wesley D. Sacher: Max Planck Institute of Microstructure Physics
Joyce K. S. Poon: Max Planck Institute of Microstructure Physics

Nature Communications, 2022, vol. 13, issue 1, 1-7

Abstract: Abstract Visible and near-infrared spectrum photonic integrated circuits are quickly becoming a key technology to address the scaling challenges in quantum information and biosensing. Thus far, integrated photonic platforms in this spectral range have lacked integrated photodetectors. Here, we report silicon nitride-on-silicon waveguide photodetectors that are monolithically integrated in a visible light photonic platform on silicon. Owing to a leaky-wave silicon nitride-on-silicon design, the devices achieved a high external quantum efficiency of >60% across a record wavelength span from λ ~ 400 nm to ~640 nm, an opto-electronic bandwidth up to 9 GHz, and an avalanche gain-bandwidth product up to 173 ± 30 GHz. As an example, a photodetector was integrated with a wavelength-tunable microring in a single chip for on-chip power monitoring.

Date: 2022
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DOI: 10.1038/s41467-022-34100-3

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