Evaporated nanometer chalcogenide films for scalable high-performance complementary electronics

Ao Liu, Huihui Zhu, Taoyu Zou, Youjin Reo, Gi-Seong Ryu and Yong-Young Noh ()
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Ao Liu: Pohang University of Science and Technology
Huihui Zhu: Pohang University of Science and Technology
Taoyu Zou: Pohang University of Science and Technology
Youjin Reo: Pohang University of Science and Technology
Gi-Seong Ryu: Pohang University of Science and Technology
Yong-Young Noh: Pohang University of Science and Technology

Nature Communications, 2022, vol. 13, issue 1, 1-8

Abstract: Abstract The exploration of stable and high-mobility semiconductors that can be grown over a large area using cost-effective methods continues to attract the interest of the electronics community. However, many mainstream candidates are challenged by scarce and expensive components, manufacturing costs, low stability, and limitations of large-area growth. Herein, we report wafer-scale ultrathin (metal) chalcogenide semiconductors for high-performance complementary electronics using standard room temperature thermal evaporation. The n-type bismuth sulfide delivers an in-situ transition from a conductor to a high-mobility semiconductor after mild post-annealing with self-assembly phase conversion, achieving thin-film transistors with mobilities of over 10 cm2 V−1 s−1, on/off current ratios exceeding 108, and high stability. Complementary inverters are constructed in combination with p-channel tellurium device with hole mobilities of over 50 cm2 V−1 s−1, delivering remarkable voltage transfer characteristics with a high gain of 200. This work has laid the foundation for depositing scalable electronics in a simple and cost-effective manner, which is compatible with monolithic integration with commercial products such as organic light-emitting diodes.

Date: 2022
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DOI: 10.1038/s41467-022-34119-6

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