The gate injection-based field-effect synapse transistor with linear conductance update for online training

Seokho Seo, Beomjin Kim, Donghoon Kim, Seungwoo Park, Tae Ryong Kim, Junkyu Park, Hakcheon Jeong, See-On Park, Taehoon Park, Hyeok Shin, Myung-Su Kim, Yang-Kyu Choi and Shinhyun Choi ()
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Seokho Seo: The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)
Beomjin Kim: The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)
Donghoon Kim: The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)
Seungwoo Park: The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)
Tae Ryong Kim: The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)
Junkyu Park: The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)
Hakcheon Jeong: The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)
See-On Park: The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)
Taehoon Park: The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)
Hyeok Shin: The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)
Myung-Su Kim: The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)
Yang-Kyu Choi: The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)
Shinhyun Choi: The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)

Nature Communications, 2022, vol. 13, issue 1, 1-10

Abstract: Abstract Neuromorphic computing, an alternative for von Neumann architecture, requires synapse devices where the data can be stored and computed in the same place. The three-terminal synapse device is attractive for neuromorphic computing due to its high stability and controllability. However, high nonlinearity on weight update, low dynamic range, and incompatibility with conventional CMOS systems have been reported as obstacles for large-scale crossbar arrays. Here, we propose the CMOS compatible gate injection-based field-effect transistor employing thermionic emission to enhance the linear conductance update. The dependence of the linearity on the conduction mechanism is examined by inserting an interfacial layer in the gate stack. To demonstrate the conduction mechanism, the gate current measurement is conducted under varying temperatures. The device based on thermionic emission achieves superior synaptic characteristics, leading to high performance on the artificial neural network simulation as 93.17% on the MNIST dataset.

Date: 2022
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DOI: 10.1038/s41467-022-34178-9

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