Defect free strain relaxation of microcrystals on mesoporous patterned silicon

Alexandre Heintz (), Bouraoui Ilahi, Alexandre Pofelski, Gianluigi Botton, Gilles Patriarche, Andrea Barzaghi, Simon Fafard, Richard Arès, Giovanni Isella and Abderraouf Boucherif ()
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Alexandre Heintz: Université de Sherbrooke
Bouraoui Ilahi: Université de Sherbrooke
Alexandre Pofelski: McMaster University
Gianluigi Botton: McMaster University
Gilles Patriarche: Centre de Nanosciences et de Nanotechnologies – C2N, CNRS, Univ. Paris-Sud, Université Paris-Saclay
Andrea Barzaghi: L-NESS and Dipartimento di Fisica, Politecnico di Milano
Simon Fafard: Université de Sherbrooke
Richard Arès: Université de Sherbrooke
Giovanni Isella: L-NESS and Dipartimento di Fisica, Politecnico di Milano
Abderraouf Boucherif: Université de Sherbrooke

Nature Communications, 2022, vol. 13, issue 1, 1-9

Abstract: Abstract A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor materials such as Ge and III-V on Silicon (Si) substrate, enabling novel functionalities on the well-established low-cost Si technology platform. Here, we demonstrate a compliant Si substrate allowing defect-free epitaxial growth of lattice mismatched materials. The method is based on the deep patterning of the Si substrate to form micrometer-scale pillars and subsequent electrochemical porosification. The investigation of the epitaxial Ge crystalline quality by X-ray diffraction, transmission electron microscopy and etch-pits counting demonstrates the full elastic relaxation of defect-free microcrystals. The achievement of dislocation free heteroepitaxy relies on the interplay between elastic deformation of the porous micropillars, set under stress by the lattice mismatch between Ge and Si, and on the diffusion of Ge into the mesoporous patterned substrate attenuating the mismatch strain at the Ge/Si interface.

Date: 2022
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DOI: 10.1038/s41467-022-34288-4

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