An epitaxial graphene platform for zero-energy edge state nanoelectronics

Vladimir S. Prudkovskiy, Yiran Hu, Kaimin Zhang, Yue Hu, Peixuan Ji, Grant Nunn, Jian Zhao, Chenqian Shi, Antonio Tejeda, David Wander, Alessandro Cecco, Clemens B. Winkelmann, Yuxuan Jiang, Tianhao Zhao, Katsunori Wakabayashi, Zhigang Jiang, Lei Ma (), Claire Berger and Walt A. Heer ()
Additional contact information
Vladimir S. Prudkovskiy: Tianjin University
Yiran Hu: School of Physics, Georgia Institute of Technology
Kaimin Zhang: Tianjin University
Yue Hu: School of Physics, Georgia Institute of Technology
Peixuan Ji: Tianjin University
Grant Nunn: School of Physics, Georgia Institute of Technology
Jian Zhao: Tianjin University
Chenqian Shi: Tianjin University
Antonio Tejeda: Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud
David Wander: Institut Néel, Univ. Grenoble Alpes, CNRS, Grenoble INP
Alessandro Cecco: Institut Néel, Univ. Grenoble Alpes, CNRS, Grenoble INP
Clemens B. Winkelmann: Institut Néel, Univ. Grenoble Alpes, CNRS, Grenoble INP
Yuxuan Jiang: National High Magnetic Field Laboratory
Tianhao Zhao: School of Physics, Georgia Institute of Technology
Katsunori Wakabayashi: Kwansei Gakuin University
Zhigang Jiang: School of Physics, Georgia Institute of Technology
Lei Ma: Tianjin University
Claire Berger: School of Physics, Georgia Institute of Technology
Walt A. Heer: Tianjin University

Nature Communications, 2022, vol. 13, issue 1, 1-11

Abstract: Abstract Graphene’s original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater than the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state forms a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon–ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. This makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics.

Date: 2022
References: View references in EconPapers View complete reference list from CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/s41467-022-34369-4 Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-34369-4

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/s41467-022-34369-4

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().