Spin-defect qubits in two-dimensional transition metal dichalcogenides operating at telecom wavelengths

Yeonghun Lee (), Yaoqiao Hu, Xiuyao Lang, Dongwook Kim, Kejun Li, Yuan Ping, Kai-Mei C. Fu and Kyeongjae Cho ()
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Yeonghun Lee: The University of Texas at Dallas
Yaoqiao Hu: The University of Texas at Dallas
Xiuyao Lang: The University of Texas at Dallas
Dongwook Kim: The University of Texas at Dallas
Kejun Li: University of California
Yuan Ping: University of California
Kai-Mei C. Fu: University of Washington
Kyeongjae Cho: The University of Texas at Dallas

Nature Communications, 2022, vol. 13, issue 1, 1-10

Abstract: Abstract Solid state quantum defects are promising candidates for scalable quantum information systems which can be seamlessly integrated with the conventional semiconductor electronic devices within the 3D monolithically integrated hybrid classical-quantum devices. Diamond nitrogen-vacancy (NV) center defects are the representative examples, but the controlled positioning of an NV center within bulk diamond is an outstanding challenge. Furthermore, quantum defect properties may not be easily tuned for bulk crystalline quantum defects. In comparison, 2D semiconductors, such as transition metal dichalcogenides (TMDs), are promising solid platform to host a quantum defect with tunable properties and a possibility of position control. Here, we computationally discover a promising defect family for spin qubit realization in 2D TMDs. The defects consist of transition metal atoms substituted at chalcogen sites with desirable spin-triplet ground state, zero-field splitting in the tens of GHz, and strong zero-phonon coupling to optical transitions in the highly desirable telecom band.

Date: 2022
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DOI: 10.1038/s41467-022-35048-0

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