Wafer-scale nanofabrication of telecom single-photon emitters in silicon

Michael Hollenbach (), Nico Klingner, Nagesh S. Jagtap, Lothar Bischoff, Ciarán Fowley, Ulrich Kentsch, Gregor Hlawacek, Artur Erbe, Nikolay V. Abrosimov, Manfred Helm, Yonder Berencén () and Georgy V. Astakhov ()
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Michael Hollenbach: Institute of Ion Beam Physics and Materials Research
Nico Klingner: Institute of Ion Beam Physics and Materials Research
Nagesh S. Jagtap: Institute of Ion Beam Physics and Materials Research
Lothar Bischoff: Institute of Ion Beam Physics and Materials Research
Ciarán Fowley: Institute of Ion Beam Physics and Materials Research
Ulrich Kentsch: Institute of Ion Beam Physics and Materials Research
Gregor Hlawacek: Institute of Ion Beam Physics and Materials Research
Artur Erbe: Institute of Ion Beam Physics and Materials Research
Nikolay V. Abrosimov: Leibniz-Institut für Kristallzüchtung (IKZ)
Manfred Helm: Institute of Ion Beam Physics and Materials Research
Yonder Berencén: Institute of Ion Beam Physics and Materials Research
Georgy V. Astakhov: Institute of Ion Beam Physics and Materials Research

Nature Communications, 2022, vol. 13, issue 1, 1-7

Abstract: Abstract A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been realized in silicon. In all previous cases, however, single-photon emitters were created uncontrollably in random locations, preventing their scalability. Here, we report the controllable fabrication of single G and W centers in silicon wafers using focused ion beams (FIB) with high probability. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single telecom emitters at desired positions on the nanoscale. Our findings unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm.

Date: 2022
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DOI: 10.1038/s41467-022-35051-5

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