Synergistic passivation and stepped-dimensional perovskite analogs enable high-efficiency near-infrared light-emitting diodes

Yongjie Liu, Chen Tao, Yu Cao, Liangyan Chen, Shuxin Wang, Pei Li, Cheng Wang, Chenwei Liu, Feihong Ye, Shengyong Hu, Meng Xiao, Zheng Gao, Pengbing Gui, Fang Yao, Kailian Dong, Jiashuai Li, Xuzhi Hu, Hengjiang Cong, Shuangfeng Jia, Ti Wang, Jianbo Wang, Gang Li, Wei Huang, Weijun Ke (), Jianpu Wang () and Guojia Fang ()
Additional contact information
Yongjie Liu: Wuhan University
Chen Tao: Wuhan University
Yu Cao: Nanjing Tech University (Nanjing Tech)
Liangyan Chen: Wuhan Polytechnic University
Shuxin Wang: Wuhan University
Pei Li: Wuhan University
Cheng Wang: Wuhan University
Chenwei Liu: Wuhan University
Feihong Ye: Wuhan University
Shengyong Hu: Nanjing University
Meng Xiao: Wuhan University
Zheng Gao: Wuhan University
Pengbing Gui: Wuhan University
Fang Yao: Wuhan University
Kailian Dong: Wuhan University
Jiashuai Li: Wuhan University
Xuzhi Hu: Wuhan University
Hengjiang Cong: Wuhan University
Shuangfeng Jia: Wuhan University
Ti Wang: Wuhan University
Jianbo Wang: Wuhan University
Gang Li: The Hong Kong Polytechnic University
Wei Huang: Nanjing Tech University (Nanjing Tech)
Weijun Ke: Wuhan University
Jianpu Wang: Nanjing Tech University (Nanjing Tech)
Guojia Fang: Wuhan University

Nature Communications, 2022, vol. 13, issue 1, 1-12

Abstract: Abstract Formamidinium lead iodide (FAPbI3) perovskites are promising emitters for near-infrared light-emitting diodes. However, their performance is still limited by defect-assisted nonradiative recombination and band offset-induced carrier aggregation at the interface. Herein, we introduce a couple of cadmium salts with acetate or halide anion into the FAPbI3 perovskite precursors to synergistically passivate the material defects and optimize the device band structure. Particularly, the perovskite analogs, containing zero-dimensional formamidinium cadmium iodide, one-dimensional δ-FAPbI3, two-dimensional FA2FAn-1PbnI3n+1, and three-dimensional α-FAPbI3, can be obtained in one pot and play a pivotal and positive role in energy transfer in the formamidinium iodide-rich lead-based perovskite films. As a result, the near-infrared FAPbI3-based devices deliver a maximum external quantum efficiency of 24.1% together with substantially improved operational stability. Combining our findings on defect passivation and energy transfer, we also achieve near-infrared light communication with device twins of light emitting and unprecedented self-driven detection.

Date: 2022
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DOI: 10.1038/s41467-022-35218-0

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