Thermal-inert and ohmic-contact interface for high performance half-Heusler based thermoelectric generator

Ruiheng Liu, Yunfei Xing, Jincheng Liao, Xugui Xia, Chao Wang, Chenxi Zhu, Fangfang Xu, Zhi-Gang Chen, Lidong Chen, Jian Huang () and Shengqiang Bai ()
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Ruiheng Liu: Chinese Academy of Sciences
Yunfei Xing: Chinese Academy of Sciences
Jincheng Liao: Chinese Academy of Sciences
Xugui Xia: Chinese Academy of Sciences
Chao Wang: Chinese Academy of Sciences
Chenxi Zhu: Chinese Academy of Sciences
Fangfang Xu: Chinese Academy of Sciences
Zhi-Gang Chen: Queensland University of Technology
Lidong Chen: Chinese Academy of Sciences
Jian Huang: Chinese Academy of Sciences
Shengqiang Bai: Chinese Academy of Sciences

Nature Communications, 2022, vol. 13, issue 1, 1-8

Abstract: Abstract Unsatisfied electrode bonding in half-Heusler devices renders thermal damage and large efficiency loss, which limits their practical service at high temperatures. Here, we develop a thermodynamic strategy to screen barrier layer elements. Theoretically, we found that the interface between VIIB elements and half-Heuslers possesses near-zero interfacial reaction energy and large atomic diffusion barrier. Experimentally, such an interphase proves to be the atomic direct bonding and has high thermal stability at 1073 K, leading to ideal ohmic contact. Such thermally inert and ohmic contact interface enable modules stably to work at elevated temperature up to 1100 K, which releases the peak performance of half-Heuslers and in turn boosts the energy conversion efficiencies to the records of 11.1% and 13.3% for half-Heusler single-stage and half-Heusler/Bi2Te3 segmented modules. This design strategy provides a feasible solution for the high-temperature half-Heusler generators and gives enlightenment for other package interconnection design of electronic devices.

Date: 2022
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DOI: 10.1038/s41467-022-35290-6

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