Sliding induced multiple polarization states in two-dimensional ferroelectrics

Peng Meng, Yaze Wu, Renji Bian, Er Pan, Biao Dong, Xiaoxu Zhao, Jiangang Chen, Lishu Wu, Yuqi Sun, Qundong Fu, Qing Liu, Dong Shi, Qi Zhang, Yong-Wei Zhang (), Zheng Liu () and Fucai Liu ()
Additional contact information
Peng Meng: University of Electronic Science and Technology of China
Yaze Wu: Agency for Science, Technology and Research (A*STAR)
Renji Bian: University of Electronic Science and Technology of China
Er Pan: University of Electronic Science and Technology of China
Biao Dong: Nanjing University
Xiaoxu Zhao: Peking University
Jiangang Chen: University of Electronic Science and Technology of China
Lishu Wu: Nanyang Technological University
Yuqi Sun: University of Electronic Science and Technology of China
Qundong Fu: Nanyang Technological University
Qing Liu: University of Electronic Science and Technology of China
Dong Shi: University of Electronic Science and Technology of China
Qi Zhang: Nanjing University
Yong-Wei Zhang: Agency for Science, Technology and Research (A*STAR)
Zheng Liu: Nanyang Technological University
Fucai Liu: University of Electronic Science and Technology of China

Nature Communications, 2022, vol. 13, issue 1, 1-10

Abstract: Abstract When the atomic layers in a non-centrosymmetric van der Waals structure slide against each other, the interfacial charge transfer results in a reversal of the structure’s spontaneous polarization. This phenomenon is known as sliding ferroelectricity and it is markedly different from conventional ferroelectric switching mechanisms relying on ion displacement. Here, we present layer dependence as a new dimension to control sliding ferroelectricity. By fabricating 3 R MoS2 of various thicknesses into dual-gate field-effect transistors, we obtain anomalous intermediate polarization states in multilayer (more than bilayer) 3 R MoS2. Using results from ab initio density functional theory calculations, we propose a generalized model to describe the ferroelectric switching process in multilayer 3 R MoS2 and to explain the formation of these intermediate polarization states. This work reveals the critical roles layer number and interlayer dipole coupling play in sliding ferroelectricity and presents a new strategy for the design of novel sliding ferroelectric devices.

Date: 2022
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Citations: View citations in EconPapers (14)

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DOI: 10.1038/s41467-022-35339-6

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