Sliding ferroelectricity in van der Waals layered γ-InSe semiconductor

Fengrui Sui, Min Jin, Yuanyuan Zhang, Ruijuan Qi (), Yu-Ning Wu, Rong Huang, Fangyu Yue () and Junhao Chu
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Fengrui Sui: East China Normal University
Min Jin: Shanghai Dianji University
Yuanyuan Zhang: East China Normal University
Ruijuan Qi: East China Normal University
Yu-Ning Wu: East China Normal University
Rong Huang: East China Normal University
Fangyu Yue: East China Normal University
Junhao Chu: East China Normal University

Nature Communications, 2023, vol. 14, issue 1, 1-8

Abstract: Abstract Two-dimensional (2D) van-der-Waals (vdW) layered ferroelectric semiconductors are highly desired for in-memory computing and ferroelectric photovoltaics or detectors. Beneficial from the weak interlayer vdW-force, controlling the structure by interlayer twist/translation or doping is an effective strategy to manipulate the fundamental properties of 2D-vdW semiconductors, which has contributed to the newly-emerging sliding ferroelectricity. Here, we report unconventional room-temperature ferroelectricity, both out-of-plane and in-plane, in vdW-layered γ-InSe semiconductor triggered by yttrium-doping (InSe:Y). We determine an effective piezoelectric constant of ∼7.5 pm/V for InSe:Y flakes with thickness of ∼50 nm, about one order of magnitude larger than earlier reports. We directly visualize the enhanced sliding switchable polarization originating from the fantastic microstructure modifications including the stacking-faults elimination and a subtle rhombohedral distortion due to the intralayer compression and continuous interlayer pre-sliding. Our investigations provide new freedom degrees of structure manipulation for intrinsic properties in 2D-vdW-layered semiconductors to expand ferroelectric candidates for next-generation nanoelectronics.

Date: 2023
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DOI: 10.1038/s41467-022-35490-0

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