Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Yanfei Zhao, Mukesh Tripathi, Kristiāns Čerņevičs, Ahmet Avsar, Hyun Goo Ji, Juan Francisco Gonzalez Marin, Cheol-Yeon Cheon, Zhenyu Wang, Oleg V. Yazyev and Andras Kis ()
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Yanfei Zhao: École Polytechnique Fédérale de Lausanne (EPFL)
Mukesh Tripathi: École Polytechnique Fédérale de Lausanne (EPFL)
Kristiāns Čerņevičs: École Polytechnique Fédérale de Lausanne (EPFL)
Ahmet Avsar: École Polytechnique Fédérale de Lausanne (EPFL)
Hyun Goo Ji: École Polytechnique Fédérale de Lausanne (EPFL)
Juan Francisco Gonzalez Marin: École Polytechnique Fédérale de Lausanne (EPFL)
Cheol-Yeon Cheon: École Polytechnique Fédérale de Lausanne (EPFL)
Zhenyu Wang: École Polytechnique Fédérale de Lausanne (EPFL)
Oleg V. Yazyev: École Polytechnique Fédérale de Lausanne (EPFL)
Andras Kis: École Polytechnique Fédérale de Lausanne (EPFL)

Nature Communications, 2023, vol. 14, issue 1, 1-9

Abstract: Abstract Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is imperative to understand and characterize the influence of defects in this class of materials. Here, we examine the electrical response of defect filling and emission using deep level transient spectroscopy (DLTS) and reveal defect states and their hybridization in a monolayer MOCVD-grown material deposited on CMOS-compatible substrates. Supported by aberration-corrected STEM imaging and theoretical calculations, we find that neighboring sulfur vacancy pairs introduce additional shallow trap states via hybridization of individual vacancy levels. Even though such vacancy pairs only represent ~10% of the total defect concentration, they can have a substantial influence on the off currents and switching slopes of field-effect transistors based on 2D semiconductors. Our technique, which can quantify the energy states of different defects and their interactions, allows rapid and nondestructive electrical characterization of defect states important for the defect engineering of 2D semiconductors.

Date: 2023
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DOI: 10.1038/s41467-022-35651-1

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