One-dimensional semimetal contacts to two-dimensional semiconductors

Xuanzhang Li, Yang Wei (), Zhijie Wang, Ya Kong, Yipeng Su, Gaotian Lu, Zhen Mei, Yi Su, Guangqi Zhang, Jianhua Xiao, Liang Liang, Jia Li, Qunqing Li, Jin Zhang, Shoushan Fan and Yuegang Zhang ()
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Xuanzhang Li: Tsinghua University
Yang Wei: Tsinghua University
Zhijie Wang: Tsinghua University
Ya Kong: Peking University
Yipeng Su: Tsinghua University
Gaotian Lu: Tsinghua University
Zhen Mei: Tsinghua University
Yi Su: Tsinghua University
Guangqi Zhang: Tsinghua University
Jianhua Xiao: Tsinghua University
Liang Liang: Tsinghua University
Jia Li: Tsinghua University
Qunqing Li: Tsinghua University
Jin Zhang: Peking University
Shoushan Fan: Tsinghua University
Yuegang Zhang: Tsinghua University

Nature Communications, 2023, vol. 14, issue 1, 1-8

Abstract: Abstract Two-dimensional (2D) semiconductors are promising in channel length scaling of field-effect transistors (FETs) due to their excellent gate electrostatics. However, scaling of their contact length still remains a significant challenge because of the sharply raised contact resistance and the deteriorated metal conductivity at nanoscale. Here, we construct a 1D semimetal-2D semiconductor contact by employing single-walled carbon nanotube electrodes, which can push the contact length into the sub-2 nm region. Such 1D–2D heterostructures exhibit smaller van der Waals gaps than the 2D–2D ones, while the Schottky barrier height can be effectively tuned via gate potential to achieve Ohmic contact. We propose a longitudinal transmission line model for analyzing the potential and current distribution of devices in short contact limit, and use it to extract the 1D–2D contact resistivity which is as low as 10−6 Ω·cm2 for the ultra-short contacts. We further demonstrate that the semimetal nanotubes with gate-tunable work function could form good contacts to various 2D semiconductors including MoS2, WS2 and WSe2. The study on 1D semimetal contact provides a basis for further miniaturization of nanoelectronics in the future.

Date: 2023
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DOI: 10.1038/s41467-022-35760-x

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