Phonon-mediated room-temperature quantum Hall transport in graphene

Daniel Vaquero, Vito Clericò, Michael Schmitz, Juan Antonio Delgado-Notario, Adrian Martín-Ramos, Juan Salvador-Sánchez, Claudius S. A. Müller, Km Rubi, Kenji Watanabe, Takashi Taniguchi, Bernd Beschoten, Christoph Stampfer, Enrique Diez, Mikhail I. Katsnelson, Uli Zeitler, Steffen Wiedmann and Sergio Pezzini ()
Additional contact information
Daniel Vaquero: Universidad de Salamanca
Vito Clericò: Universidad de Salamanca
Michael Schmitz: RWTH Aachen University
Juan Antonio Delgado-Notario: Universidad de Salamanca
Adrian Martín-Ramos: Universidad de Salamanca
Juan Salvador-Sánchez: Universidad de Salamanca
Claudius S. A. Müller: Radboud University
Km Rubi: Radboud University
Kenji Watanabe: National Institute for Materials Science
Takashi Taniguchi: National Institute for Materials Science
Bernd Beschoten: RWTH Aachen University
Christoph Stampfer: RWTH Aachen University
Enrique Diez: Universidad de Salamanca
Mikhail I. Katsnelson: Radboud University, Institute for Molecules and Materials
Uli Zeitler: Radboud University
Steffen Wiedmann: Radboud University
Sergio Pezzini: NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore

Nature Communications, 2023, vol. 14, issue 1, 1-6

Abstract: Abstract The quantum Hall (QH) effect in two-dimensional electron systems (2DESs) is conventionally observed at liquid-helium temperatures, where lattice vibrations are strongly suppressed and bulk carrier scattering is dominated by disorder. However, due to large Landau level (LL) separation (~2000 K at B = 30 T), graphene can support the QH effect up to room temperature (RT), concomitant with a non-negligible population of acoustic phonons with a wave-vector commensurate to the inverse electronic magnetic length. Here, we demonstrate that graphene encapsulated in hexagonal boron nitride (hBN) realizes a novel transport regime, where dissipation in the QH phase is governed predominantly by electron-phonon scattering. Investigating thermally-activated transport at filling factor 2 up to RT in an ensemble of back-gated devices, we show that the high B-field behaviour correlates with their zero B-field transport mobility. By this means, we extend the well-accepted notion of phonon-limited resistivity in ultra-clean graphene to a hitherto unexplored high-field realm.

Date: 2023
References: View references in EconPapers View complete reference list from CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/s41467-023-35986-3 Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-35986-3

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/s41467-023-35986-3

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().