Ultralow contact resistance in organic transistors via orbital hybridization

Junpeng Zeng, Daowei He (), Jingsi Qiao (), Yating Li, Li Sun, Weisheng Li, Jiacheng Xie, Si Gao, Lijia Pan, Peng Wang, Yong Xu, Yun Li, Hao Qiu, Yi Shi, Jian-Bin Xu, Wei Ji and Xinran Wang ()
Additional contact information
Junpeng Zeng: Nanjing University
Daowei He: Nanjing University
Jingsi Qiao: Beijing Institute of Technology
Yating Li: Nanjing University
Li Sun: Nanjing University
Weisheng Li: Nanjing University
Jiacheng Xie: Nanjing University
Si Gao: Nanjing University
Lijia Pan: Nanjing University
Peng Wang: Nanjing University
Yong Xu: Nanjing University of Posts and Telecommunications
Yun Li: Nanjing University
Hao Qiu: Nanjing University
Yi Shi: Nanjing University
Jian-Bin Xu: The Chinese University of Hong Kong
Wei Ji: Renmin University of China
Xinran Wang: Nanjing University

Nature Communications, 2023, vol. 14, issue 1, 1-10

Abstract: Abstract Organic field-effect transistors (OFETs) are of interest in unconventional form of electronics. However, high-performance OFETs are currently contact-limited, which represent a major challenge toward operation in the gigahertz regime. Here, we realize ultralow total contact resistance (Rc) down to 14.0 Ω ∙ cm in C10-DNTT OFETs by using transferred platinum (Pt) as contact. We observe evidence of Pt-catalyzed dehydrogenation of side alkyl chains which effectively reduces the metal-semiconductor van der Waals gap and promotes orbital hybridization. We report the ultrahigh performance OFETs, including hole mobility of 18 cm2 V−1 s−1, saturation current of 28.8 μA/μm, subthreshold swing of 60 mV/dec, and intrinsic cutoff frequency of 0.36 GHz. We further develop resist-free transfer and patterning strategies to fabricate large-area OFET arrays, showing 100% yield and excellent variability in the transistor metrics. As alkyl chains widely exist in conjugated molecules and polymers, our strategy can potentially enhance the performance of a broad range of organic optoelectronic devices.

Date: 2023
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DOI: 10.1038/s41467-023-36006-0

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