Sub-10 fJ/bit radiation-hard nanoelectromechanical non-volatile memory

Yong-Bok Lee, Min-Ho Kang, Pan-Kyu Choi, Su-Hyun Kim, Tae-Soo Kim, So-Young Lee and Jun-Bo Yoon ()
Additional contact information
Yong-Bok Lee: School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)
Min-Ho Kang: National NanoFab Center (NNFC)
Pan-Kyu Choi: School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)
Su-Hyun Kim: School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)
Tae-Soo Kim: School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)
So-Young Lee: School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)
Jun-Bo Yoon: School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)

Nature Communications, 2023, vol. 14, issue 1, 1-9

Abstract: Abstract With the exponential growth of the semiconductor industry, radiation-hardness has become an indispensable property of memory devices. However, implementation of radiation-hardened semiconductor memory devices inevitably requires various radiation-hardening technologies from the layout level to the system level, and such technologies incur a significant energy overhead. Thus, there is a growing demand for emerging memory devices that are energy-efficient and intrinsically radiation-hard. Here, we report a nanoelectromechanical non-volatile memory (NEM-NVM) with an ultra-low energy consumption and radiation-hardness. To achieve an ultra-low operating energy of less than 10 $${{{{{{\rm{fJ\; bit}}}}}}}^{-1}$$ fJ bit − 1 , we introduce an out-of-plane electrode configuration and electrothermal erase operation. These approaches enable the NEM-NVM to be programmed with an ultra-low energy of 2.83 $${{{{{{\rm{fJ\; bit}}}}}}}^{-1}$$ fJ bit − 1 . Furthermore, due to its mechanically operating mechanisms and radiation-robust structural material, the NEM-NVM retains its superb characteristics without radiation-induced degradation such as increased leakage current, threshold voltage shift, and unintended bit-flip even after 1 Mrad irradiation.

Date: 2023
References: View references in EconPapers View complete reference list from CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/s41467-023-36076-0 Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-36076-0

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/s41467-023-36076-0

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().