Enhanced gain and detectivity of unipolar barrier solar blind avalanche photodetector via lattice and band engineering

Qingyi Zhang, Ning Li, Tao Zhang, Dianmeng Dong, Yongtao Yang, Yuehui Wang, Zhengang Dong, Jiaying Shen, Tianhong Zhou, Yuanlin Liang, Weihua Tang, Zhenping Wu (), Yang Zhang () and Jianhua Hao ()
Additional contact information
Qingyi Zhang: Beijing University of Posts and Telecommunications
Ning Li: Beijing University of Posts and Telecommunications
Tao Zhang: Beijing University of Posts and Telecommunications
Dianmeng Dong: Beijing University of Posts and Telecommunications
Yongtao Yang: Beijing University of Posts and Telecommunications
Yuehui Wang: Beijing University of Posts and Telecommunications
Zhengang Dong: Beijing University of Posts and Telecommunications
Jiaying Shen: Beijing University of Posts and Telecommunications
Tianhong Zhou: Nankai University
Yuanlin Liang: Nankai University
Weihua Tang: Beijing University of Posts and Telecommunications
Zhenping Wu: Beijing University of Posts and Telecommunications
Yang Zhang: Nankai University
Jianhua Hao: The Hong Kong Polytechnic University, Hung Hom

Nature Communications, 2023, vol. 14, issue 1, 1-9

Abstract: Abstract Ga2O3-based solar blind avalanche photodetectors exhibit low voltage operation, optical filter-free and monolithic integration of photodetector arrays, and therefore they are promising to be an alternative to the bulky and fragile photomultiplier tubes for weak signal detection in deep-ultraviolet region. Here, by deliberate lattice and band engineering, we construct an n-Barrier-n unipolar barrier avalanche photodetector consisting of β-Ga2O3/MgO/Nb:SrTiO3 heterostructure, in which the enlarged conduction band offsets fortify the reverse breakdown and suppress the dark current while the negligible valance band offsets faciliate minority carrier flow across the heterojunction. The developed devices exhibit record-high avalanche gain up to 5.9 × 105 and detectivity of 2.33 × 1016 Jones among the reported wafer-scale grown Ga2O3-based photodetectors, which are even comparable to the commercial photomultiplier tubes. These findings provide insights into precise manipulation of band alignment in avalanche photodetectors, and also offer exciting opportunities for further developing high-performance Ga2O3-based electronics and optoelectronics.

Date: 2023
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (3)

Downloads: (external link)
https://www.nature.com/articles/s41467-023-36117-8 Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-36117-8

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/s41467-023-36117-8

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().