Atomically dispersed iridium catalysts on silicon photoanode for efficient photoelectrochemical water splitting

Sang Eon Jun, Youn-Hye Kim, Jaehyun Kim, Woo Seok Cheon, Sungkyun Choi, Jinwook Yang, Hoonkee Park, Hyungsoo Lee, Sun Hwa Park, Ki Chang Kwon, Jooho Moon (), Soo-Hyun Kim () and Ho Won Jang ()
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Sang Eon Jun: Seoul National University
Youn-Hye Kim: Yeungnam University
Jaehyun Kim: Seoul National University
Woo Seok Cheon: Seoul National University
Sungkyun Choi: Seoul National University
Jinwook Yang: Seoul National University
Hoonkee Park: Seoul National University
Hyungsoo Lee: Yonsei University
Sun Hwa Park: Korea Research Institute of Standards and Science
Ki Chang Kwon: Korea Research Institute of Standards and Science
Jooho Moon: Yonsei University
Soo-Hyun Kim: Ulsan National Institute of Science and Technology
Ho Won Jang: Seoul National University

Nature Communications, 2023, vol. 14, issue 1, 1-11

Abstract: Abstract Stabilizing atomically dispersed single atoms (SAs) on silicon photoanodes for photoelectrochemical-oxygen evolution reaction is still challenging due to the scarcity of anchoring sites. Here, we elaborately demonstrate the decoration of iridium SAs on silicon photoanodes and assess the role of SAs on the separation and transfer of photogenerated charge carriers. NiO/Ni thin film, an active and highly stable catalyst, is capable of embedding the iridium SAs in its lattices by locally modifying the electronic structure. The isolated iridium SAs enable the effective photogenerated charge transport by suppressing the charge recombination and lower the thermodynamic energy barrier in the potential-determining step. The Ir SAs/NiO/Ni/ZrO2/n-Si photoanode exhibits a benchmarking photoelectrochemical performance with a high photocurrent density of 27.7 mA cm−2 at 1.23 V vs. reversible hydrogen electrode and 130 h stability. This study proposes the rational design of SAs on silicon photoelectrodes and reveals the potential of the iridium SAs to boost photogenerated charge carrier kinetics.

Date: 2023
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DOI: 10.1038/s41467-023-36335-0

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