Wafer-scale and universal van der Waals metal semiconductor contact

Lingan Kong, Ruixia Wu, Yang Chen, Ying Huangfu, Liting Liu, Wei Li, Donglin Lu, Quanyang Tao, Wenjing Song, Wanying Li, Zheyi Lu, Xiao Liu, Yunxin Li, Zhiwei Li, Wei Tong, Shuimei Ding, Songlong Liu, Likuan Ma, Liwang Ren, Yiliu Wang, Lei Liao, Xidong Duan and Yuan Liu ()
Additional contact information
Lingan Kong: Hunan University
Ruixia Wu: Hunan University
Yang Chen: Hunan University
Ying Huangfu: Hunan University
Liting Liu: Hunan University
Wei Li: Hunan University
Donglin Lu: Hunan University
Quanyang Tao: Hunan University
Wenjing Song: Hunan University
Wanying Li: Hunan University
Zheyi Lu: Hunan University
Xiao Liu: Hunan University
Yunxin Li: Hunan University
Zhiwei Li: Hunan University
Wei Tong: Hunan University
Shuimei Ding: Hunan University
Songlong Liu: Hunan University
Likuan Ma: Hunan University
Liwang Ren: Hunan University
Yiliu Wang: Hunan University
Lei Liao: Hunan University
Xidong Duan: Hunan University
Yuan Liu: Hunan University

Nature Communications, 2023, vol. 14, issue 1, 1-8

Abstract: Abstract Van der Waals (vdW) metallic contacts have been demonstrated as a promising approach to reduce the contact resistance and minimize the Fermi level pinning at the interface of two-dimensional (2D) semiconductors. However, only a limited number of metals can be mechanically peeled and laminated to fabricate vdW contacts, and the required manual transfer process is not scalable. Here, we report a wafer-scale and universal vdW metal integration strategy readily applicable to a wide range of metals and semiconductors. By utilizing a thermally decomposable polymer as the buffer layer, different metals were directly deposited without damaging the underlying 2D semiconductor channels. The polymer buffer could be dry-removed through thermal annealing. With this technique, various metals could be vdW integrated as the contact of 2D transistors, including Ag, Al, Ti, Cr, Ni, Cu, Co, Au, Pd. Finally, we demonstrate that this vdW integration strategy can be extended to bulk semiconductors with reduced Fermi level pinning effect.

Date: 2023
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DOI: 10.1038/s41467-023-36715-6

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