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Ultra-low-current driven InGaN blue micro light-emitting diodes for electrically efficient and self-heating relaxed microdisplay

Woo Jin Baek, Juhyuk Park, Joonsup Shim, Bong Ho Kim, Seongchong Park, Hyun Soo Kim, Dae-Myeong Geum () and Sang Hyeon Kim ()
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Woo Jin Baek: Korea Advanced Institute of Science and Technology (KAIST)
Juhyuk Park: Korea Advanced Institute of Science and Technology (KAIST)
Joonsup Shim: Korea Advanced Institute of Science and Technology (KAIST)
Bong Ho Kim: Korea Advanced Institute of Science and Technology (KAIST)
Seongchong Park: Korea Research Institute of Standards and Science
Hyun Soo Kim: Korea Advanced Institute of Science and Technology (KAIST)
Dae-Myeong Geum: Korea Advanced Institute of Science and Technology (KAIST)
Sang Hyeon Kim: Korea Advanced Institute of Science and Technology (KAIST)

Nature Communications, 2023, vol. 14, issue 1, 1-11

Abstract: Abstract InGaN-based micro-light-emitting diodes have a strong potential as a crucial building block for next-generation displays. However, small-size pixels suffer from efficiency degradations, which increase the power consumption of the display. We demonstrate strategies for epitaxial structure engineering carefully considering the quantum barrier layer and electron blocking layer to alleviate efficiency degradations in low current injection regime by reducing the lateral diffusion of injected carriers via reducing the tunneling rate of electrons through the barrier layer and balanced carrier injection. As a result, the fabricated micro-light-emitting diodes show a high external quantum efficiency of 3.00% at 0.1 A/cm2 for the pixel size of 10 × 10 μm2 and a negligible Jmax EQE shift during size reduction, which is challenging due to the non-radiative recombination at the sidewall. Furthermore, we verify that our epitaxy strategies can result in the relaxation of self-heating of the micro-light-emitting diodes, where the average pixel temperature was effectively reduced.

Date: 2023
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DOI: 10.1038/s41467-023-36773-w

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