Sub-1 Volt and high-bandwidth visible to near-infrared electro-optic modulators

Dylan Renaud (), Daniel Rimoli Assumpcao, Graham Joe, Amirhassan Shams-Ansari, Di Zhu, Yaowen Hu, Neil Sinclair and Marko Loncar ()
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Dylan Renaud: Harvard University
Daniel Rimoli Assumpcao: Harvard University
Graham Joe: Harvard University
Amirhassan Shams-Ansari: Harvard University
Di Zhu: Harvard University
Yaowen Hu: Harvard University
Neil Sinclair: Harvard University
Marko Loncar: Harvard University

Nature Communications, 2023, vol. 14, issue 1, 1-7

Abstract: Abstract Integrated electro-optic (EO) modulators are fundamental photonics components with utility in domains ranging from digital communications to quantum information processing. At telecommunication wavelengths, thin-film lithium niobate modulators exhibit state-of-the-art performance in voltage-length product (VπL), optical loss, and EO bandwidth. However, applications in optical imaging, optogenetics, and quantum science generally require devices operating in the visible-to-near-infrared (VNIR) wavelength range. Here, we realize VNIR amplitude and phase modulators featuring VπL’s of sub-1 V ⋅ cm, low optical loss, and high bandwidth EO response. Our Mach-Zehnder modulators exhibit a VπL as low as 0.55 V ⋅ cm at 738 nm, on-chip optical loss of ~0.7 dB/cm, and EO bandwidths in excess of 35 GHz. Furthermore, we highlight the opportunities these high-performance modulators offer by demonstrating integrated EO frequency combs operating at VNIR wavelengths, with over 50 lines and tunable spacing, and frequency shifting of pulsed light beyond its intrinsic bandwidth (up to 7x Fourier limit) by an EO shearing method.

Date: 2023
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DOI: 10.1038/s41467-023-36870-w

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