Heterovalent-doping-enabled atom-displacement fluctuation leads to ultrahigh energy-storage density in AgNbO3-based multilayer capacitors

Li-Feng Zhu, Shiqing Deng (), Lei Zhao, Gen Li, Qi Wang, Linhai Li, Yongke Yan (), He Qi, Bo-Ping Zhang (), Jun Chen and Jing-Feng Li ()
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Li-Feng Zhu: University of Science and Technology Beijing
Shiqing Deng: University of Science and Technology Beijing
Lei Zhao: Hebei University
Gen Li: Tsinghua University
Qi Wang: University of Science and Technology Beijing
Linhai Li: University of Science and Technology Beijing
Yongke Yan: Xi’an Jiaotong University
He Qi: University of Science and Technology Beijing
Bo-Ping Zhang: University of Science and Technology Beijing
Jun Chen: University of Science and Technology Beijing
Jing-Feng Li: Tsinghua University

Nature Communications, 2023, vol. 14, issue 1, 1-9

Abstract: Abstract Dielectric capacitors with high energy storage performance are highly desired for next-generation advanced high/pulsed power capacitors that demand miniaturization and integration. However, the poor energy-storage density that results from the low breakdown strength, has been the major challenge for practical applications of dielectric capacitors. Herein, we propose a heterovalent-doping-enabled atom-displacement fluctuation strategy for the design of low-atom-displacements regions in the antiferroelectric matrix to achieve the increase in breakdown strength and enhancement of the energy-storage density for AgNbO3-based multilayer capacitors. An ultrahigh breakdown strength ~1450 kV·cm−1 is realized in the Sm0.05Ag0.85Nb0.7Ta0.3O3 multilayer capacitors, especially with an ultrahigh Urec ~14 J·cm−3, excellent η ~ 85% and PD,max ~ 102.84 MW·cm−3, manifesting a breakthrough in the comprehensive energy storage performance for lead-free antiferroelectric capacitors. This work offers a good paradigm for improving the energy storage properties of antiferroelectric multilayer capacitors to meet the demanding requirements of advanced energy storage applications.

Date: 2023
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DOI: 10.1038/s41467-023-36919-w

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