Reducing charge noise in quantum dots by using thin silicon quantum wells

Brian Paquelet Wuetz, Davide Degli Esposti, Anne-Marije J. Zwerver, Sergey V. Amitonov, Marc Botifoll, Jordi Arbiol, Amir Sammak, Lieven M. K. Vandersypen, Maximilian Russ and Giordano Scappucci ()
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Brian Paquelet Wuetz: Delft University of Technology
Davide Degli Esposti: Delft University of Technology
Anne-Marije J. Zwerver: Delft University of Technology
Sergey V. Amitonov: Delft University of Technology
Marc Botifoll: Campus UAB
Jordi Arbiol: Campus UAB
Amir Sammak: QuTech and Netherlands Organisation for Applied Scientific Research (TNO)
Lieven M. K. Vandersypen: Delft University of Technology
Maximilian Russ: Delft University of Technology
Giordano Scappucci: Delft University of Technology

Nature Communications, 2023, vol. 14, issue 1, 1-9

Abstract: Abstract Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots to improve charge noise systematically. Here, we address the semiconductor-dielectric interface and the buried quantum well of a 28Si/SiGe heterostructure and show the connection between charge noise, measured locally in quantum dots, and global disorder in the host semiconductor, measured with macroscopic Hall bars. In 5 nm thick 28Si quantum wells, we find that improvements in the scattering properties and uniformity of the two-dimensional electron gas over a 100 mm wafer correspond to a significant reduction in charge noise, with a minimum value of 0.29 ± 0.02 μeV/Hz½ at 1 Hz averaged over several quantum dots. We extrapolate the measured charge noise to simulated dephasing times to CZ-gate fidelities that improve nearly one order of magnitude. These results point to a clean and quiet crystalline environment for integrating long-lived and high-fidelity spin qubits into a larger system.

Date: 2023
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DOI: 10.1038/s41467-023-36951-w

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