Top-down patterning of topological surface and edge states using a focused ion beam

Abdulhakim Bake, Qi Zhang, Cong Son Ho, Grace L. Causer, Weiyao Zhao, Zengji Yue, Alexander Nguyen, Golrokh Akhgar, Julie Karel, David Mitchell, Zeljko Pastuovic, Roger Lewis, Jared H. Cole, Mitchell Nancarrow, Nagarajan Valanoor, Xiaolin Wang and David Cortie ()
Additional contact information
Abdulhakim Bake: University of Wollongong
Qi Zhang: The Australian Research Council Centre for Excellence in Future Low Energy Electronics Technologies
Cong Son Ho: RMIT University
Grace L. Causer: Technical University of Munich
Weiyao Zhao: University of Wollongong
Zengji Yue: University of Shanghai for Science and Technology
Alexander Nguyen: The Australian Research Council Centre for Excellence in Future Low Energy Electronics Technologies
Golrokh Akhgar: The Australian Research Council Centre for Excellence in Future Low Energy Electronics Technologies
Julie Karel: The Australian Research Council Centre for Excellence in Future Low Energy Electronics Technologies
David Mitchell: University of Wollongong
Zeljko Pastuovic: The Australian Nuclear Science and Technology Organisation (ANSTO)
Roger Lewis: University of Wollongong
Jared H. Cole: The Australian Research Council Centre for Excellence in Future Low Energy Electronics Technologies
Mitchell Nancarrow: University of Wollongong
Nagarajan Valanoor: The Australian Research Council Centre for Excellence in Future Low Energy Electronics Technologies
Xiaolin Wang: University of Wollongong
David Cortie: University of Wollongong

Nature Communications, 2023, vol. 14, issue 1, 1-8

Abstract: Abstract The conducting boundary states of topological insulators appear at an interface where the characteristic invariant ℤ2 switches from 1 to 0. These states offer prospects for quantum electronics; however, a method is needed to spatially-control ℤ2 to pattern conducting channels. It is shown that modifying Sb2Te3 single-crystal surfaces with an ion beam switches the topological insulator into an amorphous state exhibiting negligible bulk and surface conductivity. This is attributed to a transition from ℤ2 = 1 → ℤ2 = 0 at a threshold disorder strength. This observation is supported by density functional theory and model Hamiltonian calculations. Here we show that this ion-beam treatment allows for inverse lithography to pattern arrays of topological surfaces, edges and corners which are the building blocks of topological electronics.

Date: 2023
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DOI: 10.1038/s41467-023-37102-x

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