Limits to the strain engineering of layered square-planar nickelate thin films

Dan Ferenc Segedin, Berit H. Goodge, Grace A. Pan, Qi Song, Harrison LaBollita, Myung-Chul Jung, Hesham El-Sherif, Spencer Doyle, Ari Turkiewicz, Nicole K. Taylor, Jarad A. Mason, Alpha T. N’Diaye, Hanjong Paik, Ismail El Baggari, Antia S. Botana, Lena F. Kourkoutis, Charles M. Brooks and Julia A. Mundy ()
Additional contact information
Dan Ferenc Segedin: Harvard University
Berit H. Goodge: Cornell University
Grace A. Pan: Harvard University
Qi Song: Harvard University
Harrison LaBollita: Arizona State University
Myung-Chul Jung: Arizona State University
Hesham El-Sherif: Harvard University
Spencer Doyle: Harvard University
Ari Turkiewicz: Harvard University
Nicole K. Taylor: Harvard University
Jarad A. Mason: Harvard University
Alpha T. N’Diaye: Lawrence Berkeley National Laboratory
Hanjong Paik: Cornell University
Ismail El Baggari: Harvard University
Antia S. Botana: Arizona State University
Lena F. Kourkoutis: Cornell University
Charles M. Brooks: Harvard University
Julia A. Mundy: Harvard University

Nature Communications, 2023, vol. 14, issue 1, 1-14

Abstract: Abstract The layered square-planar nickelates, Ndn+1NinO2n+2, are an appealing system to tune the electronic properties of square-planar nickelates via dimensionality; indeed, superconductivity was recently observed in Nd6Ni5O12 thin films. Here, we investigate the role of epitaxial strain in the competing requirements for the synthesis of the n = 3 Ruddlesden-Popper compound, Nd4Ni3O10, and subsequent reduction to the square-planar phase, Nd4Ni3O8. We synthesize our highest quality Nd4Ni3O10 films under compressive strain on LaAlO3 (001), while Nd4Ni3O10 on NdGaO3 (110) exhibits tensile strain-induced rock salt faults but retains bulk-like transport properties. A high density of extended defects forms in Nd4Ni3O10 on SrTiO3 (001). Films reduced on LaAlO3 become insulating and form compressive strain-induced c-axis canting defects, while Nd4Ni3O8 films on NdGaO3 are metallic. This work provides a pathway to the synthesis of Ndn+1NinO2n+2 thin films and sets limits on the ability to strain engineer these compounds via epitaxy.

Date: 2023
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DOI: 10.1038/s41467-023-37117-4

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