Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene

Jubin Nathawat, Ishiaka Mansaray, Kohei Sakanashi, Naoto Wada, Michael D. Randle, Shenchu Yin, Keke He, Nargess Arabchigavkani, Ripudaman Dixit, Bilal Barut, Miao Zhao, Harihara Ramamoorthy, Ratchanok Somphonsane, Gil-Ho Kim, Kenji Watanabe, Takashi Taniguchi, Nobuyuki Aoki, Jong E. Han () and Jonathan P. Bird ()
Additional contact information
Jubin Nathawat: University at Buffalo, the State University of New York
Ishiaka Mansaray: University at Buffalo, the State University of New York
Kohei Sakanashi: Chiba University, Inage-ku
Naoto Wada: Chiba University, Inage-ku
Michael D. Randle: University at Buffalo, the State University of New York
Shenchu Yin: University at Buffalo, the State University of New York
Keke He: University at Buffalo, the State University of New York
Nargess Arabchigavkani: University at Buffalo, the State University of New York
Ripudaman Dixit: University at Buffalo, the State University of New York
Bilal Barut: University at Buffalo, the State University of New York
Miao Zhao: Institute of Microelectronics of Chinese Academy of Sciences
Harihara Ramamoorthy: King Mongkut’s Institute of Technology Ladkrabang
Ratchanok Somphonsane: King Mongkut’s Institute of Technology Ladkrabang
Gil-Ho Kim: Sungkyunkwan University
Kenji Watanabe: National Institute for Materials Science
Takashi Taniguchi: National Institute for Materials Science
Nobuyuki Aoki: Chiba University, Inage-ku
Jong E. Han: University at Buffalo, the State University of New York
Jonathan P. Bird: University at Buffalo, the State University of New York

Nature Communications, 2023, vol. 14, issue 1, 1-11

Abstract: Abstract Stacking of graphene with hexagonal boron nitride (h-BN) can dramatically modify its bands from their usual linear form, opening a series of narrow minigaps that are separated by wider minibands. While the resulting spectrum offers strong potential for use in functional (opto)electronic devices, a proper understanding of the dynamics of hot carriers in these bands is a prerequisite for such applications. In this work, we therefore apply a strategy of rapid electrical pulsing to drive carriers in graphene/h-BN heterostructures deep into the dissipative limit of strong electron-phonon coupling. By using electrical gating to move the chemical potential through the “Moiré bands”, we demonstrate a cyclical evolution between metallic and semiconducting states. This behavior is captured in a self-consistent model of non-equilibrium transport that considers the competition of electrically driven inter-band tunneling and hot-carrier scattering by strongly non-equilibrium phonons. Overall, our results demonstrate how a treatment of the dynamics of both hot carriers and hot phonons is essential to understanding the properties of functional graphene superlattices.

Date: 2023
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DOI: 10.1038/s41467-023-37292-4

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