Chirality-dependent electrical transport properties of carbon nanotubes obtained by experimental measurement

Wei Su, Xiao Li, Linhai Li, Dehua Yang, Futian Wang, Xiaojun Wei, Weiya Zhou, Hiromichi Kataura, Sishen Xie and Huaping Liu ()
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Wei Su: Institute of Physics, Chinese Academy of Sciences
Xiao Li: Institute of Physics, Chinese Academy of Sciences
Linhai Li: Institute of Physics, Chinese Academy of Sciences
Dehua Yang: Institute of Physics, Chinese Academy of Sciences
Futian Wang: Institute of Physics, Chinese Academy of Sciences
Xiaojun Wei: Institute of Physics, Chinese Academy of Sciences
Weiya Zhou: Institute of Physics, Chinese Academy of Sciences
Hiromichi Kataura: National Institute of Advanced Industrial Science and Technology (AIST)
Sishen Xie: Institute of Physics, Chinese Academy of Sciences
Huaping Liu: Institute of Physics, Chinese Academy of Sciences

Nature Communications, 2023, vol. 14, issue 1, 1-9

Abstract: Abstract Establishing the relationship between the electrical transport properties of single-wall carbon nanotubes (SWCNTs) and their structures is critical for the design of high-performance SWCNT-based electronic and optoelectronic devices. Here, we systematically investigated the effect of the chiral structures of SWCNTs on their electrical transport properties by measuring the performance of thin-film transistors constructed by eleven distinct (n, m) single-chirality SWCNT films. The results show that, even for SWCNTs with the same diameters but different chiral angles, the difference in the on-state current or carrier mobility could reach an order of magnitude. Further analysis indicates that the electrical transport properties of SWCNTs have strong type and family dependence. With increasing chiral angle for the same-family SWCNTs, Type I SWCNTs exhibit increasing on-state current and mobility, while Type II SWCNTs show the reverse trend. The differences in the electrical properties of the same-family SWCNTs with different chiralities can be attributed to their different electronic band structures, which determine the contact barrier between electrodes and SWCNTs, intrinsic resistance and intertube contact resistance. Our present findings provide an important physical basis for performance optimization and application expansion of SWCNT-based devices.

Date: 2023
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DOI: 10.1038/s41467-023-37443-7

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