Current-driven writing process in antiferromagnetic Mn2Au for memory applications

S. Reimers, Y. Lytvynenko, Y. R. Niu, E. Golias, B. Sarpi, L. S. I. Veiga, T. Denneulin, A. Kovács, R. E. Dunin-Borkowski, J. Bläßer, M. Kläui and M. Jourdan ()
Additional contact information
S. Reimers: Johannes Gutenberg-Universität Mainz
Y. Lytvynenko: Johannes Gutenberg-Universität Mainz
Y. R. Niu: MAX IV Laboratory
E. Golias: MAX IV Laboratory
B. Sarpi: Diamond Light Source, Chilton
L. S. I. Veiga: Diamond Light Source, Chilton
T. Denneulin: Forschungszentrum Jülich
A. Kovács: Forschungszentrum Jülich
R. E. Dunin-Borkowski: Forschungszentrum Jülich
J. Bläßer: Johannes Gutenberg-Universität Mainz
M. Kläui: Johannes Gutenberg-Universität Mainz
M. Jourdan: Johannes Gutenberg-Universität Mainz

Nature Communications, 2023, vol. 14, issue 1, 1-6

Abstract: Abstract Current pulse driven Néel vector rotation in metallic antiferromagnets is one of the most promising concepts in antiferromagnetic spintronics. We show microscopically that the Néel vector of epitaxial thin films of the prototypical compound Mn2Au can be reoriented reversibly in the complete area of cross shaped device structures using single current pulses. The resulting domain pattern with aligned staggered magnetization is long term stable enabling memory applications. We achieve this switching with low heating of ≈20 K, which is promising regarding fast and efficient devices without the need for thermal activation. Current polarity dependent reversible domain wall motion demonstrates a Néel spin-orbit torque acting on the domain walls.

Date: 2023
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DOI: 10.1038/s41467-023-37569-8

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