Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration

Zheyi Lu, Yang Chen, Weiqi Dang, Lingan Kong, Quanyang Tao, Likuan Ma, Donglin Lu, Liting Liu, Wanying Li, Zhiwei Li, Xiao Liu, Yiliu Wang, Xidong Duan, Lei Liao and Yuan Liu ()
Additional contact information
Zheyi Lu: Hunan University
Yang Chen: Hunan University
Weiqi Dang: Hunan University
Lingan Kong: Hunan University
Quanyang Tao: Hunan University
Likuan Ma: Hunan University
Donglin Lu: Hunan University
Liting Liu: Hunan University
Wanying Li: Hunan University
Zhiwei Li: Hunan University
Xiao Liu: Hunan University
Yiliu Wang: Hunan University
Xidong Duan: Hunan University
Lei Liao: Hunan University
Yuan Liu: Hunan University

Nature Communications, 2023, vol. 14, issue 1, 1-8

Abstract: Abstract The practical application of two-dimensional (2D) semiconductors for high-performance electronics requires the integration with large-scale and high-quality dielectrics—which however have been challenging to deposit to date, owing to their dangling-bonds-free surface. Here, we report a dry dielectric integration strategy that enables the transfer of wafer-scale and high-κ dielectrics on top of 2D semiconductors. By utilizing an ultra-thin buffer layer, sub-3 nm thin Al2O3 or HfO2 dielectrics could be pre-deposited and then mechanically dry-transferred on top of MoS2 monolayers. The transferred ultra-thin dielectric film could retain wafer-scale flatness and uniformity without any cracks, demonstrating a capacitance up to 2.8 μF/cm2, equivalent oxide thickness down to 1.2 nm, and leakage currents of ~10−7 A/cm2. The fabricated top-gate MoS2 transistors showed intrinsic properties without doping effects, exhibiting on-off ratios of ~107, subthreshold swing down to 68 mV/dec, and lowest interface states of 7.6×109 cm−2 eV−1. We also show that the scalable top-gate arrays can be used to construct functional logic gates. Our study provides a feasible route towards the vdW integration of high-κ dielectric films using an industry-compatible ALD process with well-controlled thickness, uniformity and scalability.

Date: 2023
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DOI: 10.1038/s41467-023-37887-x

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